GB1368224A - Process for the production of monocrystalline silicon - Google Patents

Process for the production of monocrystalline silicon

Info

Publication number
GB1368224A
GB1368224A GB743873A GB743873A GB1368224A GB 1368224 A GB1368224 A GB 1368224A GB 743873 A GB743873 A GB 743873A GB 743873 A GB743873 A GB 743873A GB 1368224 A GB1368224 A GB 1368224A
Authority
GB
United Kingdom
Prior art keywords
granules
heated
temperature
production
monocrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB743873A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1368224A publication Critical patent/GB1368224A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1368224 Granular silicon DOW CORNING CORP 15 Feb 1973 [29 June 1972] 7438/73 Heading C1A Granular monocrystalline Si is prepared by heating solid polycrystalline Si to a temperature of at least 325‹ C. but below the m.p. of Si and then rapidly cooling the heated Si to cause severe thermal stressing. A Si rod may be heated to a temperature of 600-750‹ C. and then quenched in water to form Si granules of size 0À64-5À08 cm. Smaller granules may be made by breaking the cooled granules with a hammer. The granules may be cleaned by etching with a HNO3/HF mixture.
GB743873A 1972-06-29 1973-02-15 Process for the production of monocrystalline silicon Expired GB1368224A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26729372A 1972-06-29 1972-06-29

Publications (1)

Publication Number Publication Date
GB1368224A true GB1368224A (en) 1974-09-25

Family

ID=23018178

Family Applications (1)

Application Number Title Priority Date Filing Date
GB743873A Expired GB1368224A (en) 1972-06-29 1973-02-15 Process for the production of monocrystalline silicon

Country Status (4)

Country Link
JP (1) JPS5232828B2 (en)
FR (1) FR2190730B3 (en)
GB (1) GB1368224A (en)
NL (1) NL7309113A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218491Y2 (en) * 1978-05-24 1987-05-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency

Also Published As

Publication number Publication date
FR2190730A1 (en) 1974-02-01
NL7309113A (en) 1974-01-02
JPS5232828B2 (en) 1977-08-24
JPS4937563A (en) 1974-04-08
FR2190730B3 (en) 1976-06-18

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee