GB1366748A - Silicon nitride layers - Google Patents

Silicon nitride layers

Info

Publication number
GB1366748A
GB1366748A GB4585372A GB4585372A GB1366748A GB 1366748 A GB1366748 A GB 1366748A GB 4585372 A GB4585372 A GB 4585372A GB 4585372 A GB4585372 A GB 4585372A GB 1366748 A GB1366748 A GB 1366748A
Authority
GB
United Kingdom
Prior art keywords
silicon nitride
nitride layers
layers
silicon
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4585372A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1366748A publication Critical patent/GB1366748A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
GB4585372A 1971-10-06 1972-10-05 Silicon nitride layers Expired GB1366748A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712149898 DE2149898A1 (de) 1971-10-06 1971-10-06 Verfahren zur herstellung passivierter halbleiterbauelemente

Publications (1)

Publication Number Publication Date
GB1366748A true GB1366748A (en) 1974-09-11

Family

ID=5821635

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4585372A Expired GB1366748A (en) 1971-10-06 1972-10-05 Silicon nitride layers

Country Status (5)

Country Link
DE (1) DE2149898A1 (enExample)
FR (1) FR2156016B1 (enExample)
GB (1) GB1366748A (enExample)
IT (1) IT968555B (enExample)
NL (1) NL7213432A (enExample)

Also Published As

Publication number Publication date
IT968555B (it) 1974-03-20
DE2149898A1 (de) 1973-04-12
FR2156016A1 (enExample) 1973-05-25
NL7213432A (enExample) 1973-04-10
FR2156016B1 (enExample) 1977-04-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee