GB1358510A - Enhancement-type complementary mis semiconductor device - Google Patents
Enhancement-type complementary mis semiconductor deviceInfo
- Publication number
- GB1358510A GB1358510A GB5388272A GB5388272A GB1358510A GB 1358510 A GB1358510 A GB 1358510A GB 5388272 A GB5388272 A GB 5388272A GB 5388272 A GB5388272 A GB 5388272A GB 1358510 A GB1358510 A GB 1358510A
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxide layer
- diffused
- gate
- layer
- channel device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46094705A JPS4859783A (enrdf_load_stackoverflow) | 1971-11-25 | 1971-11-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1358510A true GB1358510A (en) | 1974-07-03 |
Family
ID=14117566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5388272A Expired GB1358510A (en) | 1971-11-25 | 1972-11-22 | Enhancement-type complementary mis semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4859783A (enrdf_load_stackoverflow) |
| DE (1) | DE2255150A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1358510A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159271A (enrdf_load_stackoverflow) * | 1974-06-12 | 1975-12-23 | ||
| US3983620A (en) * | 1975-05-08 | 1976-10-05 | National Semiconductor Corporation | Self-aligned CMOS process for bulk silicon and insulating substrate device |
| JPS5870567A (ja) * | 1981-10-22 | 1983-04-27 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
-
1971
- 1971-11-25 JP JP46094705A patent/JPS4859783A/ja active Pending
-
1972
- 1972-11-10 DE DE2255150A patent/DE2255150A1/de active Pending
- 1972-11-22 GB GB5388272A patent/GB1358510A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4859783A (enrdf_load_stackoverflow) | 1973-08-22 |
| DE2255150A1 (de) | 1973-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |