GB1357290A - Diffusion into semiconductor material - Google Patents

Diffusion into semiconductor material

Info

Publication number
GB1357290A
GB1357290A GB1223272A GB1223272A GB1357290A GB 1357290 A GB1357290 A GB 1357290A GB 1223272 A GB1223272 A GB 1223272A GB 1223272 A GB1223272 A GB 1223272A GB 1357290 A GB1357290 A GB 1357290A
Authority
GB
United Kingdom
Prior art keywords
diffusion
boron
dopant
silicon wafers
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1223272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1357290A publication Critical patent/GB1357290A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/92Controlling diffusion profile by oxidation

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
GB1223272A 1971-04-14 1972-03-16 Diffusion into semiconductor material Expired GB1357290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13400971A 1971-04-14 1971-04-14

Publications (1)

Publication Number Publication Date
GB1357290A true GB1357290A (en) 1974-06-19

Family

ID=22461342

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1223272A Expired GB1357290A (en) 1971-04-14 1972-03-16 Diffusion into semiconductor material

Country Status (5)

Country Link
US (1) US3770521A (enExample)
JP (1) JPS5310834B1 (enExample)
DE (1) DE2209776C3 (enExample)
FR (1) FR2133571B1 (enExample)
GB (1) GB1357290A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2751163C3 (de) * 1977-11-16 1982-02-25 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur Steuerung einer offenen Gallium-Diffusion und Vorrichtung zur Durchführung desselben
US4149915A (en) * 1978-01-27 1979-04-17 International Business Machines Corporation Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions
US5180690A (en) * 1988-12-14 1993-01-19 Energy Conversion Devices, Inc. Method of forming a layer of doped crystalline semiconductor alloy material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE550586A (enExample) * 1955-12-02
US3442725A (en) * 1966-05-05 1969-05-06 Motorola Inc Phosphorus diffusion system
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3484314A (en) * 1967-02-23 1969-12-16 Itt Water vapor control in vapor-solid diffusion of boron
DE1644005A1 (de) * 1967-04-26 1970-09-24 Siemens Ag Verfahren zum Dotieren von Halbleiterkristallen mit Phosphor

Also Published As

Publication number Publication date
US3770521A (en) 1973-11-06
FR2133571A1 (enExample) 1972-12-01
JPS5310834B1 (enExample) 1978-04-17
FR2133571B1 (enExample) 1978-03-03
DE2209776C3 (de) 1981-06-11
DE2209776B2 (de) 1979-12-06
DE2209776A1 (de) 1972-10-19

Similar Documents

Publication Publication Date Title
CA1035209A (en) Method for producing supports made from silicon or silicon carbide for diffusion processes
GB1143907A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB1397684A (en) Diffusion of impurity into semiconductor material
JPS5538097A (en) Method of doping silicon substrate by boron diffusion
DE2960880D1 (en) Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration
GB1377699A (en) Method of making a semiconductor device and a semiconductor device when made thereby
US3183131A (en) Semiconductor diffusion method
ES360497A1 (es) Un procedimiento para la difusion del boro en una superfi- cie dada de un cuerpo semiconductor de silicio.
GB1449789A (en) Method of growing pyrolytic silicon dioxide layers
GB1501896A (en) Semiconductor device
GB1455949A (en) Semiconductor devices cutting out a part from sheet metal by means of oxy
JPS5660055A (en) Manufacture of semiconductor device
JPS5244169A (en) Process for production of semiconductor device
US4373975A (en) Method of diffusing an impurity
JPS6453413A (en) Formation of impurity diffusion layer
US3770521A (en) Method for diffusing b or p into s: substrates
JPS553644A (en) Production of semiconductor device
GB1092582A (en) Method of manufacturing a monocrystalline silicon carbide layer
GB1134769A (en) Methods useful in the manufacture of semiconductor devices
JPS54102965A (en) Impurity diffusion method
JPS5272162A (en) Production of semiconductor device
GB1153794A (en) Improvements in and relating to the Deposition of Silicon Nitride Films
JPS533171A (en) Impurity diffusion method
JPS5745276A (en) Manufacture of thyristor
Croset et al. Study of new shallow diffusion techniques in silicon for microwave structures(Shallow diffusion in silicon using boron, phosphorous, or arsenic oxides as sources for microwave transistors)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee