GB1356159A - Semiconductor data storage circuit - Google Patents

Semiconductor data storage circuit

Info

Publication number
GB1356159A
GB1356159A GB1710771A GB1710771A GB1356159A GB 1356159 A GB1356159 A GB 1356159A GB 1710771 A GB1710771 A GB 1710771A GB 1710771 A GB1710771 A GB 1710771A GB 1356159 A GB1356159 A GB 1356159A
Authority
GB
United Kingdom
Prior art keywords
diodes
goes low
digit lines
data storage
goes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1710771A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1356159A publication Critical patent/GB1356159A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
GB1710771A 1970-07-01 1971-05-26 Semiconductor data storage circuit Expired GB1356159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH995770A CH519251A (de) 1970-07-01 1970-07-01 Integrierte Halbleiterschaltung zur Speicherung von Daten

Publications (1)

Publication Number Publication Date
GB1356159A true GB1356159A (en) 1974-06-12

Family

ID=4357544

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1710771A Expired GB1356159A (en) 1970-07-01 1971-05-26 Semiconductor data storage circuit

Country Status (6)

Country Link
US (1) US3751687A (https=)
CA (1) CA936614A (https=)
CH (1) CH519251A (https=)
DE (1) DE2125451A1 (https=)
FR (1) FR2097094B1 (https=)
GB (1) GB1356159A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356484A (en) * 1992-03-30 1994-10-18 Yater Joseph C Reversible thermoelectric converter
DE69324864T2 (de) * 1992-08-21 1999-10-07 Stmicroelectronics, Inc. Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur
KR101256467B1 (ko) * 2012-02-06 2013-04-19 삼성전자주식회사 질화물계 이종접합 반도체 소자 및 그 제조 방법
KR101256466B1 (ko) * 2012-02-06 2013-04-19 삼성전자주식회사 질화물계 이종접합 반도체 소자 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3422282A (en) * 1965-08-24 1969-01-14 Us Army Level conversion circuit for interfacing logic systems
US3492661A (en) * 1965-12-17 1970-01-27 Ibm Monolithic associative memory cell
US3564300A (en) * 1968-03-06 1971-02-16 Ibm Pulse power data storage cell
US3573505A (en) * 1968-07-15 1971-04-06 Ibm Bistable circuit and memory cell
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
NL6813833A (https=) * 1968-09-27 1970-04-01
US3588846A (en) * 1968-12-05 1971-06-28 Ibm Storage cell with variable power level
US3573758A (en) * 1969-02-27 1971-04-06 Ibm Non-linear impedance means for transistors connected to each other and to a common power source
US3610967A (en) * 1970-02-27 1971-10-05 Ibm Integrated memory cell circuit
US3618046A (en) * 1970-03-09 1971-11-02 Cogar Corp Bilevel semiconductor memory circuit with high-speed word driver

Also Published As

Publication number Publication date
CH519251A (de) 1972-02-15
DE2125451A1 (de) 1972-01-05
US3751687A (en) 1973-08-07
FR2097094B1 (https=) 1976-07-09
CA936614A (en) 1973-11-06
FR2097094A1 (https=) 1972-03-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee