FR2097094B1 - - Google Patents
Info
- Publication number
- FR2097094B1 FR2097094B1 FR7122133A FR7122133A FR2097094B1 FR 2097094 B1 FR2097094 B1 FR 2097094B1 FR 7122133 A FR7122133 A FR 7122133A FR 7122133 A FR7122133 A FR 7122133A FR 2097094 B1 FR2097094 B1 FR 2097094B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH995770A CH519251A (de) | 1970-07-01 | 1970-07-01 | Integrierte Halbleiterschaltung zur Speicherung von Daten |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2097094A1 FR2097094A1 (fr) | 1972-03-03 |
FR2097094B1 true FR2097094B1 (fr) | 1976-07-09 |
Family
ID=4357544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7122133A Expired FR2097094B1 (fr) | 1970-07-01 | 1971-06-15 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3751687A (fr) |
CA (1) | CA936614A (fr) |
CH (1) | CH519251A (fr) |
DE (1) | DE2125451A1 (fr) |
FR (1) | FR2097094B1 (fr) |
GB (1) | GB1356159A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5356484A (en) * | 1992-03-30 | 1994-10-18 | Yater Joseph C | Reversible thermoelectric converter |
DE69324864T2 (de) * | 1992-08-21 | 1999-10-07 | St Microelectronics Inc | Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur |
KR101256466B1 (ko) * | 2012-02-06 | 2013-04-19 | 삼성전자주식회사 | 질화물계 이종접합 반도체 소자 및 그 제조 방법 |
KR101256467B1 (ko) * | 2012-02-06 | 2013-04-19 | 삼성전자주식회사 | 질화물계 이종접합 반도체 소자 및 그 제조 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
US3422282A (en) * | 1965-08-24 | 1969-01-14 | Us Army | Level conversion circuit for interfacing logic systems |
US3492661A (en) * | 1965-12-17 | 1970-01-27 | Ibm | Monolithic associative memory cell |
US3564300A (en) * | 1968-03-06 | 1971-02-16 | Ibm | Pulse power data storage cell |
US3573505A (en) * | 1968-07-15 | 1971-04-06 | Ibm | Bistable circuit and memory cell |
US3540010A (en) * | 1968-08-27 | 1970-11-10 | Bell Telephone Labor Inc | Diode-coupled semiconductive memory |
NL6813833A (fr) * | 1968-09-27 | 1970-04-01 | ||
US3588846A (en) * | 1968-12-05 | 1971-06-28 | Ibm | Storage cell with variable power level |
US3573758A (en) * | 1969-02-27 | 1971-04-06 | Ibm | Non-linear impedance means for transistors connected to each other and to a common power source |
US3610967A (en) * | 1970-02-27 | 1971-10-05 | Ibm | Integrated memory cell circuit |
US3618046A (en) * | 1970-03-09 | 1971-11-02 | Cogar Corp | Bilevel semiconductor memory circuit with high-speed word driver |
-
1970
- 1970-07-01 CH CH995770A patent/CH519251A/de not_active IP Right Cessation
-
1971
- 1971-05-22 DE DE19712125451 patent/DE2125451A1/de active Pending
- 1971-05-26 GB GB1710771A patent/GB1356159A/en not_active Expired
- 1971-06-15 FR FR7122133A patent/FR2097094B1/fr not_active Expired
- 1971-06-22 CA CA116233A patent/CA936614A/en not_active Expired
- 1971-06-30 US US00158465A patent/US3751687A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2125451A1 (de) | 1972-01-05 |
CH519251A (de) | 1972-02-15 |
CA936614A (en) | 1973-11-06 |
US3751687A (en) | 1973-08-07 |
FR2097094A1 (fr) | 1972-03-03 |
GB1356159A (en) | 1974-06-12 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |