GB1353980A - Methods of manufacturing semiconductor devices - Google Patents
Methods of manufacturing semiconductor devicesInfo
- Publication number
- GB1353980A GB1353980A GB4122671A GB4122671A GB1353980A GB 1353980 A GB1353980 A GB 1353980A GB 4122671 A GB4122671 A GB 4122671A GB 4122671 A GB4122671 A GB 4122671A GB 1353980 A GB1353980 A GB 1353980A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- diodes
- gaas
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1353980 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 3 Sept 1971 [8 Sept 1970] 41226/71 Heading H1K A low-resistance ohmic contact is formed on an N-type body of a III-V compound semiconductor such as GaAs, GaP or a mixture thereof by alloying with the body a doping layer comprising a metal such as Au, Ag, Sn or In, Ge which acts as a donor in the III-V compound and a further dopant, such as As, P or Sb, which acts as a donor in Ge. On recrystallization there are formed an N-type Ge-doped III-V layer and an overlying N-type Ge layer. After removal of the remaining part of the doping layer, e.g. using Hg or liquid Ga as a solvent, a metal contact is preferably applied to the N-type Ge layer to complete the ohmic contact. The metal contact may be of Au or Ag or of one of these metals on a layer of Cr, Al or Ti. Fig. 3 shows a plurality of mesa-like Gunn diodes 7 formed by etching a GaAs body mounted temporarily on a glass support 8. The GaAs body comprises an N<SP>+</SP>-type substrate 1 and an N-type epitaxial layer 2, both surfaces being provided with metal contacts 5, 6 in accordance with the invention. Other types of device to which the invention is applicable are avalanche diodes, varactor diodes, Schottky diodes and light-emissive diodes.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7013226A NL7013226A (en) | 1970-09-08 | 1970-09-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1353980A true GB1353980A (en) | 1974-05-22 |
Family
ID=19810980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4122671A Expired GB1353980A (en) | 1970-09-08 | 1971-09-03 | Methods of manufacturing semiconductor devices |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5120155B1 (en) |
| AU (1) | AU3308671A (en) |
| BE (1) | BE772253A (en) |
| BR (1) | BR7105871D0 (en) |
| CA (1) | CA928870A (en) |
| DE (1) | DE2142900A1 (en) |
| FR (1) | FR2106379B1 (en) |
| GB (1) | GB1353980A (en) |
| IT (1) | IT939789B (en) |
| NL (1) | NL7013226A (en) |
| SE (1) | SE375187B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6509986A (en) * | 1964-08-03 | 1966-02-04 | ||
| US3386867A (en) * | 1965-09-22 | 1968-06-04 | Ibm | Method for providing electrical contacts to a wafer of gaas |
| GB1101909A (en) * | 1967-01-13 | 1968-02-07 | Standard Telephones Cables Ltd | Method for producing gallium arsenide devices |
| GB1224171A (en) * | 1967-02-07 | 1971-03-03 | Associated Semiconductor Mft | Improvements in and relating to gunn-effect devices |
-
1970
- 1970-09-08 NL NL7013226A patent/NL7013226A/xx unknown
-
1971
- 1971-08-27 DE DE19712142900 patent/DE2142900A1/en active Pending
- 1971-09-03 AU AU33086/71A patent/AU3308671A/en not_active Expired
- 1971-09-03 CA CA122055A patent/CA928870A/en not_active Expired
- 1971-09-03 GB GB4122671A patent/GB1353980A/en not_active Expired
- 1971-09-04 IT IT6993971A patent/IT939789B/en active
- 1971-09-06 JP JP6814571A patent/JPS5120155B1/ja active Pending
- 1971-09-06 BE BE772253A patent/BE772253A/en unknown
- 1971-09-06 BR BR587171A patent/BR7105871D0/en unknown
- 1971-09-06 SE SE1126971A patent/SE375187B/xx unknown
- 1971-09-08 FR FR7132438A patent/FR2106379B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AU3308671A (en) | 1973-03-08 |
| FR2106379B1 (en) | 1975-07-11 |
| IT939789B (en) | 1973-02-10 |
| FR2106379A1 (en) | 1972-05-05 |
| CA928870A (en) | 1973-06-19 |
| BE772253A (en) | 1972-03-06 |
| NL7013226A (en) | 1972-03-10 |
| SE375187B (en) | 1975-04-07 |
| JPS5120155B1 (en) | 1976-06-23 |
| BR7105871D0 (en) | 1973-04-17 |
| DE2142900A1 (en) | 1972-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2846340A (en) | Semiconductor devices and method of making same | |
| GB937438A (en) | Method of applying contacts to a semiconductor body | |
| US3903592A (en) | Process for the production of a thin layer mesa type semiconductor device | |
| GB1446406A (en) | Semiconductor devices | |
| GB1351289A (en) | Low thermal impedance schottky barrier field effect transistor | |
| GB1100708A (en) | Semiconductor signal translating devices | |
| SE316221B (en) | ||
| GB1357650A (en) | Methods of manufacturing semiconductor devices | |
| GB978561A (en) | Improvements relating to transistors | |
| GB1223196A (en) | Light-emitting diodes and method of making same | |
| GB1479898A (en) | Semiconductor devices comprising electroluminescent diode | |
| GB930503A (en) | Semiconductor devices and preparation thereof | |
| GB1152708A (en) | Improvements in or relating to Semiconductor Devices. | |
| GB911292A (en) | Improvements in and relating to semi-conductor devices | |
| GB1375269A (en) | ||
| GB1353980A (en) | Methods of manufacturing semiconductor devices | |
| GB835851A (en) | Semiconductive translating devices and methods | |
| GB1108774A (en) | Transistors | |
| GB1218666A (en) | A diode | |
| GB1412879A (en) | Shcottky barrier semiconductor device | |
| GB1400025A (en) | Gallium arsenide schottky barrier junctions | |
| GB1270498A (en) | Semiconductor devices | |
| GB1286674A (en) | Transferred electron devices | |
| GB1529853A (en) | Transferred electron devices | |
| GB1143472A (en) | Improvements in or relating to luminescence diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |