GB1351867A - Semiconductor device and process for its manufacture - Google Patents
Semiconductor device and process for its manufactureInfo
- Publication number
- GB1351867A GB1351867A GB2035071A GB2035071A GB1351867A GB 1351867 A GB1351867 A GB 1351867A GB 2035071 A GB2035071 A GB 2035071A GB 2035071 A GB2035071 A GB 2035071A GB 1351867 A GB1351867 A GB 1351867A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- source
- junction
- semi
- base layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
1351867 Semi-conductor devices GENERAL ELECTRIC CO 19 April 1971 [26 Jan 1970] 20350/71 Heading H1K A semi-conductor device includes a layer having a reverse graded net impurity concentration i.e. the concentration at a surface of the layer is less than that within the layer. The layer may form the gate controlled base layer of a thyristor, in which case the junction between it and the adjacent emitter layer has the highest reverse voltage blocking capability of any junction in the device. The layer may alternatively form the gate controlled base layer of a gate turn off thyristor, since its series resistance, in the vicinity of its junction with the other base layer, is low. Using the layer as a base layer in a transistor results in improved gain at low currents. Finally it may be employed as a barrier interface layer between the metal and remainder of the semi-conductive material in a Schottky barrier diode. Here it reduces the forward conduction drop at low current densities, while retaining the reverse voltage blocking capacity of a uniformly high resistivity layer. The layer may be formed epitaxially, the deposited material including a suitable amount of dopant to achieve the desired impurity profile. Alternatively a source substrate including an impurity with a desired profile, achieved by diffusion, may be used, the source and device substrate being heated together, the source to a higher temperature, whereupon on the introduction of iodine vapour the source material including the dopant is transferred to the device substrate, so that a doping profile which is a mirror image of that of the source may be achieved in the layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US580570A | 1970-01-26 | 1970-01-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1351867A true GB1351867A (en) | 1974-05-01 |
Family
ID=21717842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2035071A Expired GB1351867A (en) | 1970-01-26 | 1971-04-19 | Semiconductor device and process for its manufacture |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2103389A1 (en) |
| FR (1) | FR2077621B1 (en) |
| GB (1) | GB1351867A (en) |
| SE (1) | SE372375B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2135118A (en) * | 1983-02-09 | 1984-08-22 | Westinghouse Brake & Signal | Thyristors |
| US4605451A (en) * | 1984-08-08 | 1986-08-12 | Westinghouse Brake And Signal Company Limited | Process for making thyristor devices |
| US8772140B2 (en) | 2009-07-15 | 2014-07-08 | Infineon Technologies Ag | Production method for a unipolar semiconductor component and semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL259236A (en) * | 1959-12-30 | |||
| FR1297586A (en) * | 1960-09-20 | 1962-06-29 | Western Electric Co | Semiconductor device and manufacturing method |
| NL275313A (en) * | 1961-05-10 | |||
| FR1515661A (en) * | 1966-03-28 | 1968-03-01 | Ass Elect Ind | Improvements in semiconductor device manufacturing processes and products obtained |
-
1971
- 1971-01-25 SE SE83271A patent/SE372375B/xx unknown
- 1971-01-26 FR FR7102558A patent/FR2077621B1/fr not_active Expired
- 1971-01-26 DE DE19712103389 patent/DE2103389A1/en active Pending
- 1971-04-19 GB GB2035071A patent/GB1351867A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2135118A (en) * | 1983-02-09 | 1984-08-22 | Westinghouse Brake & Signal | Thyristors |
| EP0171474B1 (en) * | 1983-02-09 | 1989-05-24 | Westinghouse Brake And Signal Holdings Limited | A method for producing a thyristor device |
| US4605451A (en) * | 1984-08-08 | 1986-08-12 | Westinghouse Brake And Signal Company Limited | Process for making thyristor devices |
| US8772140B2 (en) | 2009-07-15 | 2014-07-08 | Infineon Technologies Ag | Production method for a unipolar semiconductor component and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2077621A1 (en) | 1971-10-29 |
| SE372375B (en) | 1974-12-16 |
| DE2103389A1 (en) | 1971-08-05 |
| FR2077621B1 (en) | 1973-11-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |