FR2077621A1 - - Google Patents

Info

Publication number
FR2077621A1
FR2077621A1 FR7102558A FR7102558A FR2077621A1 FR 2077621 A1 FR2077621 A1 FR 2077621A1 FR 7102558 A FR7102558 A FR 7102558A FR 7102558 A FR7102558 A FR 7102558A FR 2077621 A1 FR2077621 A1 FR 2077621A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7102558A
Other languages
French (fr)
Other versions
FR2077621B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2077621A1 publication Critical patent/FR2077621A1/fr
Application granted granted Critical
Publication of FR2077621B1 publication Critical patent/FR2077621B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
FR7102558A 1970-01-26 1971-01-26 Expired FR2077621B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US580570A 1970-01-26 1970-01-26

Publications (2)

Publication Number Publication Date
FR2077621A1 true FR2077621A1 (en) 1971-10-29
FR2077621B1 FR2077621B1 (en) 1973-11-23

Family

ID=21717842

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7102558A Expired FR2077621B1 (en) 1970-01-26 1971-01-26

Country Status (4)

Country Link
DE (1) DE2103389A1 (en)
FR (1) FR2077621B1 (en)
GB (1) GB1351867A (en)
SE (1) SE372375B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
US4605451A (en) * 1984-08-08 1986-08-12 Westinghouse Brake And Signal Company Limited Process for making thyristor devices
DE102009033302B4 (en) * 2009-07-15 2012-01-26 Infineon Technologies Ag Manufacturing Method for a Unipolar Semiconductor Device and Semiconductor Device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1297586A (en) * 1960-09-20 1962-06-29 Western Electric Co Semiconductor device and manufacturing method
FR1321379A (en) * 1961-05-10 1963-03-15 Siemens Ag Method for making a p-n junction in a single crystal semiconductor device
GB967069A (en) * 1959-12-30 1964-08-19 Ibm Semiconductor junctions having a retrograde distribution of impurities
FR1515661A (en) * 1966-03-28 1968-03-01 Ass Elect Ind Improvements in semiconductor device manufacturing processes and products obtained

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967069A (en) * 1959-12-30 1964-08-19 Ibm Semiconductor junctions having a retrograde distribution of impurities
FR1297586A (en) * 1960-09-20 1962-06-29 Western Electric Co Semiconductor device and manufacturing method
FR1321379A (en) * 1961-05-10 1963-03-15 Siemens Ag Method for making a p-n junction in a single crystal semiconductor device
FR1515661A (en) * 1966-03-28 1968-03-01 Ass Elect Ind Improvements in semiconductor device manufacturing processes and products obtained

Also Published As

Publication number Publication date
SE372375B (en) 1974-12-16
FR2077621B1 (en) 1973-11-23
GB1351867A (en) 1974-05-01
DE2103389A1 (en) 1971-08-05

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Legal Events

Date Code Title Description
ST Notification of lapse