GB1347308A - Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits - Google Patents
Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuitsInfo
- Publication number
- GB1347308A GB1347308A GB4689171A GB4689171A GB1347308A GB 1347308 A GB1347308 A GB 1347308A GB 4689171 A GB4689171 A GB 4689171A GB 4689171 A GB4689171 A GB 4689171A GB 1347308 A GB1347308 A GB 1347308A
- Authority
- GB
- United Kingdom
- Prior art keywords
- inverter
- field effect
- effect transistor
- insulated gate
- threshold voltages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 4
- 238000013500 data storage Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8587970A | 1970-11-02 | 1970-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1347308A true GB1347308A (en) | 1974-02-27 |
Family
ID=22194566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4689171A Expired GB1347308A (en) | 1970-11-02 | 1971-10-08 | Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2153879A1 (https=) |
| FR (1) | FR2112395B1 (https=) |
| GB (1) | GB1347308A (https=) |
-
1971
- 1971-10-08 GB GB4689171A patent/GB1347308A/en not_active Expired
- 1971-10-28 DE DE19712153879 patent/DE2153879A1/de active Pending
- 1971-11-02 FR FR7139180A patent/FR2112395B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2153879A1 (de) | 1972-05-10 |
| FR2112395A1 (https=) | 1972-06-16 |
| FR2112395B1 (https=) | 1975-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3393325A (en) | High speed inverter | |
| GB1366772A (en) | Field effect transistor inverter circuits | |
| US4099073A (en) | Four-level voltage supply for liquid crystal display | |
| GB1254537A (en) | Digital computer apparatus | |
| GB1473568A (en) | Mos control circuit | |
| GB1458691A (en) | Bistable circuit | |
| US3889135A (en) | Bootstrap circuit employing insulated gate transistors | |
| GB2081041A (en) | Logic circuit arrangement | |
| GB1372679A (en) | Arrangements for biasing the substrates of integrated circuits | |
| US3600609A (en) | Igfet read amplifier for double-rail memory systems | |
| JPS5567248A (en) | Frequency synthesizerrtype channel selection device | |
| GB1302952A (https=) | ||
| GB1347308A (en) | Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits | |
| GB1466195A (en) | Transistor latch circuit | |
| US3832578A (en) | Static flip-flop circuit | |
| GB1468921A (en) | Circuits including field-effect transistors | |
| GB1414263A (en) | Bipolar and insulated gate field effect transistor circuits | |
| KR920001844A (ko) | 플립플롭 회로 및 그 로직 상태 제공 방법 | |
| JPS617724A (ja) | ブ−トストラツプ型インバ−タ−回路 | |
| JPS6181691U (https=) | ||
| JP3379601B2 (ja) | 半導体集積回路装置 | |
| US4289973A (en) | AND-gate clock | |
| JPS62117410A (ja) | フリツプフロツプ | |
| GB1336927A (en) | Semiconductor circuits | |
| US3663835A (en) | Field effect transistor circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |