GB1336780A - Integrated circuit and method of manufacturing same - Google Patents

Integrated circuit and method of manufacturing same

Info

Publication number
GB1336780A
GB1336780A GB4524671A GB4524671A GB1336780A GB 1336780 A GB1336780 A GB 1336780A GB 4524671 A GB4524671 A GB 4524671A GB 4524671 A GB4524671 A GB 4524671A GB 1336780 A GB1336780 A GB 1336780A
Authority
GB
United Kingdom
Prior art keywords
substrate
doped
region
oxide layer
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4524671A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1336780A publication Critical patent/GB1336780A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H10P95/00—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB4524671A 1970-10-02 1971-09-28 Integrated circuit and method of manufacturing same Expired GB1336780A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7035702A FR2108770B1 (cg-RX-API-DMAC10.html) 1970-10-02 1970-10-02

Publications (1)

Publication Number Publication Date
GB1336780A true GB1336780A (en) 1973-11-07

Family

ID=9062203

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4524671A Expired GB1336780A (en) 1970-10-02 1971-09-28 Integrated circuit and method of manufacturing same

Country Status (6)

Country Link
JP (1) JPS56110668U (cg-RX-API-DMAC10.html)
CA (1) CA955690A (cg-RX-API-DMAC10.html)
DE (1) DE2149154A1 (cg-RX-API-DMAC10.html)
FR (1) FR2108770B1 (cg-RX-API-DMAC10.html)
GB (1) GB1336780A (cg-RX-API-DMAC10.html)
NL (1) NL159816B (cg-RX-API-DMAC10.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622043A (en) * 1978-06-19 1986-11-11 Rca Corporation Textile dyeing process: multicolor pattern dyeing of tufted nylon carpet

Also Published As

Publication number Publication date
FR2108770A1 (cg-RX-API-DMAC10.html) 1972-05-26
CA955690A (en) 1974-10-01
NL159816B (nl) 1979-03-15
FR2108770B1 (cg-RX-API-DMAC10.html) 1973-11-23
DE2149154A1 (de) 1972-04-06
JPS56110668U (cg-RX-API-DMAC10.html) 1981-08-27
NL7113236A (cg-RX-API-DMAC10.html) 1972-04-05

Similar Documents

Publication Publication Date Title
US4078947A (en) Method for forming a narrow channel length MOS field effect transistor
US3909320A (en) Method for forming MOS structure using double diffusion
US3851379A (en) Solid state components
GB972512A (en) Methods of making semiconductor devices
GB1110391A (en) Field effect transistor
GB1408180A (en) Semiconductor device manufacture
GB1355806A (en) Methods of manufacturing a semiconductor device
US4069493A (en) Novel integrated circuit and method of manufacturing same
US3873372A (en) Method for producing improved transistor devices
US3427514A (en) Mos tetrode
US3846822A (en) Methods for making field effect transistors
GB1332931A (en) Methods of manufacturing a semiconductor device
US3463974A (en) Mos transistor and method of manufacture
GB1023531A (en) Improvements in or relating to semiconductor devices
GB1193868A (en) Ohmic Contacts for Semiconductor Devices
US3500143A (en) High frequency power transistor having different resistivity base regions
US3456168A (en) Structure and method for production of narrow doped region semiconductor devices
GB1352779A (en) Method of manufacturing semiconductor devices
GB1245116A (en) Insulated gate field effect transistors
US3533158A (en) Method of utilizing an ion beam to form custom circuits
US4466008A (en) Field effect transistor
GB1183150A (en) Field Effect Transistor
US4350991A (en) Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
US3983572A (en) Semiconductor devices
GB1142674A (en) Improvements in and relating to insulated gate field effect transistors

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years