GB1332775A - Method of forming region of a desired conductivity type in the surface of a semiconductor body - Google Patents

Method of forming region of a desired conductivity type in the surface of a semiconductor body

Info

Publication number
GB1332775A
GB1332775A GB1469772A GB1469772A GB1332775A GB 1332775 A GB1332775 A GB 1332775A GB 1469772 A GB1469772 A GB 1469772A GB 1469772 A GB1469772 A GB 1469772A GB 1332775 A GB1332775 A GB 1332775A
Authority
GB
United Kingdom
Prior art keywords
layer
region
diffusion
conductivity type
desired conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1469772A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1332775A publication Critical patent/GB1332775A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/912—Displacing pn junction

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1469772A 1971-04-07 1972-03-29 Method of forming region of a desired conductivity type in the surface of a semiconductor body Expired GB1332775A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13195671A 1971-04-07 1971-04-07

Publications (1)

Publication Number Publication Date
GB1332775A true GB1332775A (en) 1973-10-03

Family

ID=22451770

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1469772A Expired GB1332775A (en) 1971-04-07 1972-03-29 Method of forming region of a desired conductivity type in the surface of a semiconductor body

Country Status (8)

Country Link
US (1) US3762968A (enExample)
JP (1) JPS533227B1 (enExample)
CA (1) CA957784A (enExample)
DE (1) DE2216031A1 (enExample)
FR (1) FR2132690B1 (enExample)
GB (1) GB1332775A (enExample)
IT (1) IT950293B (enExample)
NL (1) NL7204609A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
JPS5269264A (en) * 1975-12-05 1977-06-08 Matsushita Electronics Corp Selected diffusion method
JPS5275269A (en) * 1975-12-19 1977-06-24 Matsushita Electronics Corp Selective diffusion method
JPS53119526A (en) * 1977-03-29 1978-10-19 Tachikawa Spring Co Seat supporting device
JPS53119525A (en) * 1977-03-29 1978-10-19 Tachikawa Spring Co Seat supporting device
JPS5721824A (en) * 1980-07-14 1982-02-04 Fujitsu Ltd Manufacture of semiconductor device
US5296783A (en) * 1991-06-04 1994-03-22 Rockwell International Corporation Dual filament lamp and drive apparatus for dimmable avionics displays
FI125181B (en) 2012-02-09 2015-06-30 Outotec Oyj METHOD FOR THE MANUFACTURE OF THE MELTING CURRENT AND FORMING THE MELTING CURED BY THE METHOD

Also Published As

Publication number Publication date
FR2132690B1 (enExample) 1977-12-23
FR2132690A1 (enExample) 1972-11-24
US3762968A (en) 1973-10-02
JPS533227B1 (enExample) 1978-02-04
IT950293B (it) 1973-06-20
DE2216031A1 (de) 1972-10-12
CA957784A (en) 1974-11-12
NL7204609A (enExample) 1972-10-10
JPS4736965A (enExample) 1972-11-30

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee