GB1314951A - Mixed-crystal growth - Google Patents
Mixed-crystal growthInfo
- Publication number
- GB1314951A GB1314951A GB1736171A GB1736171A GB1314951A GB 1314951 A GB1314951 A GB 1314951A GB 1736171 A GB1736171 A GB 1736171A GB 1736171 A GB1736171 A GB 1736171A GB 1314951 A GB1314951 A GB 1314951A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vessel
- furnace
- point
- temperature
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 8
- 239000000203 mixture Substances 0.000 abstract 4
- 238000002425 crystallisation Methods 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000010587 phase diagram Methods 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702026496 DE2026496A1 (en) | 1970-05-30 | 1970-05-30 | Single mixed crystal growth using components supplied via vapour - phase |
| DE19702032638 DE2032638C3 (de) | 1970-07-01 | 1970-07-01 | Verfahren und Vorrichtung zur Herstellung eines Verbindungseinkristalls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1314951A true GB1314951A (en) | 1973-04-26 |
Family
ID=25759205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1736171A Expired GB1314951A (en) | 1970-05-30 | 1971-05-27 | Mixed-crystal growth |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS511546B1 (enExample) |
| BE (1) | BE767890A (enExample) |
| CA (1) | CA950804A (enExample) |
| FR (1) | FR2093873A5 (enExample) |
| GB (1) | GB1314951A (enExample) |
| NL (1) | NL7107207A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114524417A (zh) * | 2022-03-07 | 2022-05-24 | 先导薄膜材料（广东）有限公司 | 一种高收率碲化铅的制备方法 |
-
1971
- 1971-05-26 NL NL7107207A patent/NL7107207A/xx unknown
- 1971-05-26 CA CA113,890,A patent/CA950804A/en not_active Expired
- 1971-05-27 GB GB1736171A patent/GB1314951A/en not_active Expired
- 1971-05-28 JP JP46036339A patent/JPS511546B1/ja active Pending
- 1971-05-28 BE BE767890A patent/BE767890A/xx unknown
- 1971-05-28 FR FR7119532A patent/FR2093873A5/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114524417A (zh) * | 2022-03-07 | 2022-05-24 | 先导薄膜材料（广东）有限公司 | 一种高收率碲化铅的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2093873A5 (enExample) | 1972-01-28 |
| JPS511546B1 (enExample) | 1976-01-19 |
| CA950804A (en) | 1974-07-09 |
| NL7107207A (enExample) | 1971-12-02 |
| BE767890A (fr) | 1971-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0152359B2 (enExample) | ||
| US3318669A (en) | Method of producing and re-melting compounds and alloys | |
| US3857679A (en) | Crystal grower | |
| US3607137A (en) | Method of avoiding strain in phase transitions of single crystals | |
| US3401023A (en) | Crystal melt-growth process wherein the melt surface is covered with an inert liquid | |
| US4141777A (en) | Method of preparing doped single crystals of cadmium telluride | |
| GB1314951A (en) | Mixed-crystal growth | |
| US3933990A (en) | Synthesization method of ternary chalcogenides | |
| Fullmer et al. | Crystal growth of the solid electrolyte RbAg4I5 | |
| Mateika | Growth of MnTe single crystals from nonstoichiometric melts by liquid encapsulation | |
| GB1353917A (en) | Method and apparatus for forming crystalline bodies of a semicon ductor material | |
| CN115536025B (zh) | 系列碱土金属氧硫属（硒属）化合物及其非线性光学晶体及其制备方法及其用途 | |
| Kanda et al. | The Barium-Sodium Equilibrium System1 | |
| Goodrum | Top-seeded flux growth of tetragonal GeO2 | |
| US3519399A (en) | Method for growing single crystals of semiconductors | |
| Ruseikina et al. | Phase Equilibria in Systems DyCuS2–EuS and Cu2S− Dy2S3− EuS | |
| EP0311038A1 (en) | Process for making single-crystal mercury cadmium telluride layers | |
| Singh et al. | Phase relations and crystal growth of mercurous iodide | |
| US3694166A (en) | Crystal growth tube | |
| Gentile et al. | Czochralski-grown Proustite and related compounds | |
| EP0187843B1 (en) | Growth of single crystal cadmium-indium-telluride | |
| Chase et al. | Habit changes of Y3Al5O12 and Y3Ga5O12 grown from a PbO-PbF2 flux | |
| Gross | Zone purification of alkali iodides | |
| Wardill et al. | The preparation and assessment of indium phosphide | |
| US2935478A (en) | Production of semi-conductor bodies |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |