GB1314951A - Mixed-crystal growth - Google Patents
Mixed-crystal growthInfo
- Publication number
- GB1314951A GB1314951A GB1736171A GB1736171A GB1314951A GB 1314951 A GB1314951 A GB 1314951A GB 1736171 A GB1736171 A GB 1736171A GB 1736171 A GB1736171 A GB 1736171A GB 1314951 A GB1314951 A GB 1314951A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vessel
- furnace
- point
- temperature
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1314951 Growing mixed crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 27 May 1971 [30 May 1970 1 July 1970] 17361/71 Heading B1S [Also in Division C1] In the manufacture of a mixed crystal by cooling a quantity of liquid which contains the components of the crystal, the position of the crystallization front between the crystal and liquid phases is adjusted within a temperature range such that its temperature is substantially the solidus temperature of the desirable composition of the mixed crystal in the phase diagram of the components thereof. The invention is described in relation to lead telluride and tin telluride mixtures forming a mixed crystal of formula Pb 1-x Sn x Te. Apparatus for performing this method consists of a furnace having three heating elements 4, 5 and 6, a drawing device 1 and a rotating device 2. The element 4 is mounted freely relative to the inside of the furnace. Two oppositely located windows 9 are provided for observing the growth, a quartz tube 11 closed at either end containing the growth vessel 12 in the interior of the furnace, this being rotated by the driving mechanism 2. The growth vessel 12 is a quartz tube closed at each end within which the components of the mixed crystal to be produced are sealed in vacuum (after previously being melted in a vacuum to produce a polycrystalline rod and remove enclosed gas). The position in the furnace at which the temperature is that required for the required composition (the solidus temperature therefor) is found by a thermocouple, and marked and a point at the top of the vessel 12 (as shown) placed at a point just below the solidus temperature, the lower part (which contains the mixture) being above this so that it melts and a vapour forms which condenses in the point of the vessel 12 and then crystallizes. After the crystallisation front has moved down to the point at which the solidus temperature exists the vessel is moved up to keep it there.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702026496 DE2026496A1 (en) | 1970-05-30 | 1970-05-30 | Single mixed crystal growth using components supplied via vapour - phase |
DE19702032638 DE2032638C3 (en) | 1970-07-01 | 1970-07-01 | Method and apparatus for producing a compound single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1314951A true GB1314951A (en) | 1973-04-26 |
Family
ID=25759205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1736171A Expired GB1314951A (en) | 1970-05-30 | 1971-05-27 | Mixed-crystal growth |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS511546B1 (en) |
BE (1) | BE767890A (en) |
CA (1) | CA950804A (en) |
FR (1) | FR2093873A5 (en) |
GB (1) | GB1314951A (en) |
NL (1) | NL7107207A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114524417A (en) * | 2022-03-07 | 2022-05-24 | 先导薄膜材料(广东)有限公司 | Preparation method of high-yield lead telluride |
-
1971
- 1971-05-26 NL NL7107207A patent/NL7107207A/xx unknown
- 1971-05-26 CA CA113,890,A patent/CA950804A/en not_active Expired
- 1971-05-27 GB GB1736171A patent/GB1314951A/en not_active Expired
- 1971-05-28 JP JP46036339A patent/JPS511546B1/ja active Pending
- 1971-05-28 BE BE767890A patent/BE767890A/en unknown
- 1971-05-28 FR FR7119532A patent/FR2093873A5/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114524417A (en) * | 2022-03-07 | 2022-05-24 | 先导薄膜材料(广东)有限公司 | Preparation method of high-yield lead telluride |
Also Published As
Publication number | Publication date |
---|---|
NL7107207A (en) | 1971-12-02 |
JPS511546B1 (en) | 1976-01-19 |
FR2093873A5 (en) | 1972-01-28 |
BE767890A (en) | 1971-11-29 |
CA950804A (en) | 1974-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |