GB1314951A - Mixed-crystal growth - Google Patents

Mixed-crystal growth

Info

Publication number
GB1314951A
GB1314951A GB1736171A GB1736171A GB1314951A GB 1314951 A GB1314951 A GB 1314951A GB 1736171 A GB1736171 A GB 1736171A GB 1736171 A GB1736171 A GB 1736171A GB 1314951 A GB1314951 A GB 1314951A
Authority
GB
United Kingdom
Prior art keywords
vessel
furnace
point
temperature
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1736171A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702026496 external-priority patent/DE2026496A1/en
Priority claimed from DE19702032638 external-priority patent/DE2032638C3/en
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1314951A publication Critical patent/GB1314951A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1314951 Growing mixed crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 27 May 1971 [30 May 1970 1 July 1970] 17361/71 Heading B1S [Also in Division C1] In the manufacture of a mixed crystal by cooling a quantity of liquid which contains the components of the crystal, the position of the crystallization front between the crystal and liquid phases is adjusted within a temperature range such that its temperature is substantially the solidus temperature of the desirable composition of the mixed crystal in the phase diagram of the components thereof. The invention is described in relation to lead telluride and tin telluride mixtures forming a mixed crystal of formula Pb 1-x Sn x Te. Apparatus for performing this method consists of a furnace having three heating elements 4, 5 and 6, a drawing device 1 and a rotating device 2. The element 4 is mounted freely relative to the inside of the furnace. Two oppositely located windows 9 are provided for observing the growth, a quartz tube 11 closed at either end containing the growth vessel 12 in the interior of the furnace, this being rotated by the driving mechanism 2. The growth vessel 12 is a quartz tube closed at each end within which the components of the mixed crystal to be produced are sealed in vacuum (after previously being melted in a vacuum to produce a polycrystalline rod and remove enclosed gas). The position in the furnace at which the temperature is that required for the required composition (the solidus temperature therefor) is found by a thermocouple, and marked and a point at the top of the vessel 12 (as shown) placed at a point just below the solidus temperature, the lower part (which contains the mixture) being above this so that it melts and a vapour forms which condenses in the point of the vessel 12 and then crystallizes. After the crystallisation front has moved down to the point at which the solidus temperature exists the vessel is moved up to keep it there.
GB1736171A 1970-05-30 1971-05-27 Mixed-crystal growth Expired GB1314951A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19702026496 DE2026496A1 (en) 1970-05-30 1970-05-30 Single mixed crystal growth using components supplied via vapour - phase
DE19702032638 DE2032638C3 (en) 1970-07-01 1970-07-01 Method and apparatus for producing a compound single crystal

Publications (1)

Publication Number Publication Date
GB1314951A true GB1314951A (en) 1973-04-26

Family

ID=25759205

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1736171A Expired GB1314951A (en) 1970-05-30 1971-05-27 Mixed-crystal growth

Country Status (6)

Country Link
JP (1) JPS511546B1 (en)
BE (1) BE767890A (en)
CA (1) CA950804A (en)
FR (1) FR2093873A5 (en)
GB (1) GB1314951A (en)
NL (1) NL7107207A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114524417A (en) * 2022-03-07 2022-05-24 先导薄膜材料（广东）有限公司 Preparation method of high-yield lead telluride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114524417A (en) * 2022-03-07 2022-05-24 先导薄膜材料（广东）有限公司 Preparation method of high-yield lead telluride

Also Published As

Publication number Publication date
NL7107207A (en) 1971-12-02
JPS511546B1 (en) 1976-01-19
FR2093873A5 (en) 1972-01-28
BE767890A (en) 1971-11-29
CA950804A (en) 1974-07-09

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee