GB1314854A - Process for improving after initial crystal growth the light emissive properties of a monocrystal - Google Patents

Process for improving after initial crystal growth the light emissive properties of a monocrystal

Info

Publication number
GB1314854A
GB1314854A GB2897170A GB2897170A GB1314854A GB 1314854 A GB1314854 A GB 1314854A GB 2897170 A GB2897170 A GB 2897170A GB 2897170 A GB2897170 A GB 2897170A GB 1314854 A GB1314854 A GB 1314854A
Authority
GB
United Kingdom
Prior art keywords
monocrystal
duration
treatment
temperature
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2897170A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Publication of GB1314854A publication Critical patent/GB1314854A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1314854 Lasers COMPAGNIE GENERALE D'ELECTRICITE 15 June 1970 [20 June 1969] 28971/70 Heading H1C [Also in Division C4] A process for improving after initial crystal growth, the light emissive properties of a monocrystal doped with a material which renders the monocrystal laser active comprises heating the monocrystal in an oxidizing atmosphere at a temperature equal to 800‹ C. or between 800‹ C. and a temperature close to the melting point and at which an internal modification of the structure occurs. The duration is preferably such as to optimise the emission, and is determined experimentally by varying one of duration and temperature in the treatment of a number of identical monocrystals. The gain initially increases with duration of treatment but may subsequently decrease past the maximum value (Fig. 1 not shown). The crystal may be subjected to further thermal treatment in a reducing atmosphere and the monocrystal may be YAG and its m.p. 1970‹ C. Restoration to maximum gain or further increase in gain may be obtained by a subsequent treatment in a reducing atmosphere, during which the rod temperature may be changed. With YAG, temperatures may be 1100‹ to 1500‹ C. with 12 to 24 hrs. duration, the duration being one to 10 days.
GB2897170A 1969-06-20 1970-06-15 Process for improving after initial crystal growth the light emissive properties of a monocrystal Expired GB1314854A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6920845A FR2050703A5 (en) 1969-06-20 1969-06-20

Publications (1)

Publication Number Publication Date
GB1314854A true GB1314854A (en) 1973-04-26

Family

ID=9036155

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2897170A Expired GB1314854A (en) 1969-06-20 1970-06-15 Process for improving after initial crystal growth the light emissive properties of a monocrystal

Country Status (7)

Country Link
BE (1) BE751862A (en)
CH (1) CH514244A (en)
DE (1) DE2030345A1 (en)
FR (1) FR2050703A5 (en)
GB (1) GB1314854A (en)
LU (1) LU61130A1 (en)
NL (1) NL7008992A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1055819A (en) * 1975-06-20 1979-06-05 Roelof P. Bult Stabilization of aluminum arsenide
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
US4988402A (en) * 1988-02-09 1991-01-29 Union Carbide Chemicals And Plastics Company Inc. Processes for enhancing fluorescence of tunable titanium-doped oxide laser crystals

Also Published As

Publication number Publication date
DE2030345A1 (en) 1970-12-23
CH514244A (en) 1971-10-15
LU61130A1 (en) 1971-07-02
FR2050703A5 (en) 1971-04-02
BE751862A (en) 1970-12-14
NL7008992A (en) 1970-12-22

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees