GB1313891A - Methods of manufacturing semiconductor devices - Google Patents
Methods of manufacturing semiconductor devicesInfo
- Publication number
- GB1313891A GB1313891A GB3170470A GB3170470A GB1313891A GB 1313891 A GB1313891 A GB 1313891A GB 3170470 A GB3170470 A GB 3170470A GB 3170470 A GB3170470 A GB 3170470A GB 1313891 A GB1313891 A GB 1313891A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- junction
- compound
- tin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- 239000000155 melt Substances 0.000 abstract 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229910052718 tin Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR6922193A FR2050207B1 (de) | 1969-07-01 | 1969-07-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1313891A true GB1313891A (en) | 1973-04-18 |
Family
ID=9036716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3170470A Expired GB1313891A (en) | 1969-07-01 | 1970-06-30 | Methods of manufacturing semiconductor devices |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4840300B1 (de) |
DE (1) | DE2031916B2 (de) |
FR (1) | FR2050207B1 (de) |
GB (1) | GB1313891A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54129800A (en) * | 1978-03-31 | 1979-10-08 | Kodensha Kk | Safety device for gun muzzle |
JPS556151A (en) * | 1978-06-30 | 1980-01-17 | Kodensha Kk | Safety device for gun |
-
1969
- 1969-07-01 FR FR6922193A patent/FR2050207B1/fr not_active Expired
-
1970
- 1970-06-27 DE DE19702031916 patent/DE2031916B2/de active Granted
- 1970-06-30 GB GB3170470A patent/GB1313891A/en not_active Expired
- 1970-07-01 JP JP5723270A patent/JPS4840300B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS4840300B1 (de) | 1973-11-29 |
FR2050207B1 (de) | 1974-09-20 |
DE2031916C3 (de) | 1979-04-05 |
FR2050207A1 (de) | 1971-04-02 |
DE2031916A1 (de) | 1971-01-21 |
DE2031916B2 (de) | 1978-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2846340A (en) | Semiconductor devices and method of making same | |
US2900286A (en) | Method of manufacturing semiconductive bodies | |
GB1038946A (en) | Production of improved epitaxial films | |
GB963256A (en) | Semiconductor devices | |
DE2131391C2 (de) | Elektroluminierende Galliumphosphid-Diode | |
GB1320043A (en) | Gallium phosphide electroluminescent light sources | |
US4035205A (en) | Amphoteric heterojunction | |
GB1329041A (en) | Method of manufacturing semiconductor elements by a liquid phase growing method | |
GB1340671A (en) | Process for epitaxially growing semiconductor crystals of predetermined conductivity type | |
US3687743A (en) | Method of manufacturing a semiconductor device consisting of a ternary compound of znsias on a gaas substrate | |
US3178798A (en) | Vapor deposition process wherein the vapor contains both donor and acceptor impurities | |
US3245847A (en) | Method of producing stable gallium arsenide and semiconductor diodes made therefrom | |
GB1313891A (en) | Methods of manufacturing semiconductor devices | |
GB1270130A (en) | Improvements in and relating to methods of manufacturing semiconductor devices | |
US3065392A (en) | Semiconductor devices | |
GB1357650A (en) | Methods of manufacturing semiconductor devices | |
GB1004950A (en) | Semiconductor devices and methods of making them | |
US3530015A (en) | Method of producing gallium arsenide devices | |
US3793093A (en) | Method for producing a semiconductor device having a very small deviation in lattice constant | |
US3266952A (en) | Compound semiconductor devices | |
US3959036A (en) | Method for the production of a germanium doped gas contact layer | |
GB1149109A (en) | Preparation of semiconductor compounds | |
GB1176950A (en) | Semiconductor Devices | |
US4223336A (en) | Low resistivity ohmic contacts for compound semiconductor devices | |
GB1282635A (en) | Improvements in or relating to semiconductor devices made of gallium arsenide |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |