GB1310200A - Semiconductor target image pickup tube - Google Patents
Semiconductor target image pickup tubeInfo
- Publication number
- GB1310200A GB1310200A GB4767171A GB4767171A GB1310200A GB 1310200 A GB1310200 A GB 1310200A GB 4767171 A GB4767171 A GB 4767171A GB 4767171 A GB4767171 A GB 4767171A GB 1310200 A GB1310200 A GB 1310200A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- semi
- conductor
- coated
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45092781A JPS5033732B1 (https=) | 1970-10-23 | 1970-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1310200A true GB1310200A (en) | 1973-03-14 |
Family
ID=14063943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4767171A Expired GB1310200A (en) | 1970-10-23 | 1971-10-13 | Semiconductor target image pickup tube |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5033732B1 (https=) |
| DE (1) | DE2152733C3 (https=) |
| GB (1) | GB1310200A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5284441A (en) * | 1975-12-31 | 1977-07-14 | Matsushita Electric Ind Co Ltd | Apparatus interface protection circuit |
| US4228446A (en) * | 1979-05-10 | 1980-10-14 | Rca Corporation | Reduced blooming device having enhanced quantum efficiency |
| JPS5866835U (ja) * | 1981-10-29 | 1983-05-07 | 横河電機株式会社 | 避雷器 |
-
1970
- 1970-10-23 JP JP45092781A patent/JPS5033732B1/ja active Pending
-
1971
- 1971-10-13 GB GB4767171A patent/GB1310200A/en not_active Expired
- 1971-10-22 DE DE2152733A patent/DE2152733C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2152733C3 (de) | 1973-10-18 |
| DE2152733B2 (de) | 1973-04-05 |
| JPS5033732B1 (https=) | 1975-11-01 |
| DE2152733A1 (de) | 1972-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3202887A (en) | Mesa-transistor with impurity concentration in the base decreasing toward collector junction | |
| US4152824A (en) | Manufacture of solar cells | |
| US2861018A (en) | Fabrication of semiconductive devices | |
| GB1227705A (https=) | ||
| GB916887A (en) | Improvements in or relating to the manufacture of semiconductor devices | |
| GB1291683A (en) | Semiconductor device having a passivating film | |
| US3437533A (en) | Method of fabricating semiconductor devices | |
| GB1337283A (en) | Method of manufacturing a semiconductor device | |
| US3698078A (en) | Diode array storage system having a self-registered target and method of forming | |
| GB1310200A (en) | Semiconductor target image pickup tube | |
| US3494809A (en) | Semiconductor processing | |
| US3861969A (en) | Method for making III{14 V compound semiconductor devices | |
| JPS5496386A (en) | Manufacture of buried optical semiconductor device | |
| US3681155A (en) | Aluminum diffusions | |
| US3614829A (en) | Method of forming high stability self-registered field effect transistors | |
| GB1184796A (en) | Semiconductor Device | |
| JPS54109765A (en) | Manufacture of semiconductor device | |
| US3798082A (en) | Technique for the fabrication of a pn junction device | |
| US3975555A (en) | Method of making electrical contacts having a low optical absorption | |
| US3713913A (en) | Method of producing diffused semiconductor components from silicon | |
| US3808059A (en) | Method for manufacturing iii-v compound semiconductor device | |
| JPS5712588A (en) | Manufacture of buried type heterojunction laser element | |
| JPS55165689A (en) | Preparation of light emission semiconductor device | |
| JPS54107285A (en) | Semiconductor light emission diode | |
| JPS5525910A (en) | Multiple cold emission cathode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |