GB1309502A - Semiconductor device and method of making the same - Google Patents

Semiconductor device and method of making the same

Info

Publication number
GB1309502A
GB1309502A GB3321971A GB3321971A GB1309502A GB 1309502 A GB1309502 A GB 1309502A GB 3321971 A GB3321971 A GB 3321971A GB 3321971 A GB3321971 A GB 3321971A GB 1309502 A GB1309502 A GB 1309502A
Authority
GB
United Kingdom
Prior art keywords
type
region
ring
diffused
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3321971A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1309502A publication Critical patent/GB1309502A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB3321971A 1970-07-16 1971-07-15 Semiconductor device and method of making the same Expired GB1309502A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45062437A JPS50278B1 (enrdf_load_stackoverflow) 1970-07-16 1970-07-16

Publications (1)

Publication Number Publication Date
GB1309502A true GB1309502A (en) 1973-03-14

Family

ID=13200155

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3321971A Expired GB1309502A (en) 1970-07-16 1971-07-15 Semiconductor device and method of making the same

Country Status (3)

Country Link
JP (1) JPS50278B1 (enrdf_load_stackoverflow)
CA (1) CA936624A (enrdf_load_stackoverflow)
GB (1) GB1309502A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543739A1 (fr) * 1983-03-30 1984-10-05 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
CN118091384A (zh) * 2024-04-29 2024-05-28 杭州广立微电子股份有限公司 Sdb隔离测试结构的生成方法、sdb隔离测试结构和存储介质

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543739A1 (fr) * 1983-03-30 1984-10-05 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
EP0126499A1 (fr) * 1983-03-30 1984-11-28 Rtc-Compelec Procédé de réalisation d'un transistor bipolaire haute tension
CN118091384A (zh) * 2024-04-29 2024-05-28 杭州广立微电子股份有限公司 Sdb隔离测试结构的生成方法、sdb隔离测试结构和存储介质

Also Published As

Publication number Publication date
JPS50278B1 (enrdf_load_stackoverflow) 1975-01-07
CA936624A (en) 1973-11-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee