GB1299468A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
GB1299468A
GB1299468A GB39915/70A GB3991570A GB1299468A GB 1299468 A GB1299468 A GB 1299468A GB 39915/70 A GB39915/70 A GB 39915/70A GB 3991570 A GB3991570 A GB 3991570A GB 1299468 A GB1299468 A GB 1299468A
Authority
GB
United Kingdom
Prior art keywords
gallium arsenide
conductor
semi
layer
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39915/70A
Other languages
English (en)
Inventor
T Matsui
M Tokunaga
M Nakagawa
T Utagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1299468A publication Critical patent/GB1299468A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H10P50/648—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
GB39915/70A 1969-08-21 1970-08-19 Method of manufacturing a semiconductor device Expired GB1299468A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44065681A JPS4844830B1 (https=) 1969-08-21 1969-08-21

Publications (1)

Publication Number Publication Date
GB1299468A true GB1299468A (en) 1972-12-13

Family

ID=13293974

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39915/70A Expired GB1299468A (en) 1969-08-21 1970-08-19 Method of manufacturing a semiconductor device

Country Status (4)

Country Link
US (1) US3832225A (https=)
JP (1) JPS4844830B1 (https=)
DE (1) DE2041439A1 (https=)
GB (1) GB1299468A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933694A1 (de) * 1978-08-25 1980-03-06 Rca Corp Integrierter schaltkreis
FR2551265A1 (fr) * 1983-08-26 1985-03-01 Hitachi Cable Dispositif semiconducteur obtenu par attaque

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
JPS5342679B2 (https=) * 1975-01-08 1978-11-14
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
DE2641347C2 (de) * 1976-09-14 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von epitaxialen Schichten auf einkristallinen Substraten
US4328611A (en) * 1980-04-28 1982-05-11 Trw Inc. Method for manufacture of an interdigitated collector structure utilizing etch and refill techniques
US4447904A (en) * 1981-02-04 1984-05-08 Xerox Corporation Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933694A1 (de) * 1978-08-25 1980-03-06 Rca Corp Integrierter schaltkreis
FR2551265A1 (fr) * 1983-08-26 1985-03-01 Hitachi Cable Dispositif semiconducteur obtenu par attaque
GB2145375A (en) * 1983-08-26 1985-03-27 Hitachi Cable Semiconductor device

Also Published As

Publication number Publication date
US3832225A (en) 1974-08-27
DE2041439A1 (de) 1971-03-04
JPS4844830B1 (https=) 1973-12-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees