GB1296067A - - Google Patents
Info
- Publication number
- GB1296067A GB1296067A GB1296067DA GB1296067A GB 1296067 A GB1296067 A GB 1296067A GB 1296067D A GB1296067D A GB 1296067DA GB 1296067 A GB1296067 A GB 1296067A
- Authority
- GB
- United Kingdom
- Prior art keywords
- output
- voltage
- amplifier
- data
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 abstract 2
- 210000000352 storage cell Anatomy 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000013500 data storage Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80922369A | 1969-03-21 | 1969-03-21 | |
| US30593672A | 1972-11-13 | 1972-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1296067A true GB1296067A (en:Method) | 1972-11-15 |
Family
ID=26974880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1296067D Expired GB1296067A (en:Method) | 1969-03-21 | 1970-01-23 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3765003A (en:Method) |
| DE (1) | DE2012090C3 (en:Method) |
| FR (1) | FR2049055B1 (en:Method) |
| GB (1) | GB1296067A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998939A (en:Method) * | 1973-01-23 | 1974-09-19 | ||
| JPS49115439A (en:Method) * | 1973-02-20 | 1974-11-05 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4035662A (en) * | 1970-11-02 | 1977-07-12 | Texas Instruments Incorporated | Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits |
| US3856802A (en) * | 1971-05-10 | 1974-12-24 | Upjohn Co | 1,6-DISUBSTITUTED-4H-5-{8 4,3-a{9 BENZODIAZEPINES |
| US3786437A (en) * | 1972-01-03 | 1974-01-15 | Honeywell Inf Systems | Random access memory system utilizing an inverting cell concept |
| US4163242A (en) | 1972-11-13 | 1979-07-31 | Siemens Aktiengesellschaft | MOS storage integrated circuit using individual FET elements |
| US3806898A (en) * | 1973-06-29 | 1974-04-23 | Ibm | Regeneration of dynamic monolithic memories |
| US3858185A (en) * | 1973-07-18 | 1974-12-31 | Intel Corp | An mos dynamic memory array & refreshing system |
| US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
| US3946245A (en) * | 1975-02-12 | 1976-03-23 | Teletype Corporation | Fast-acting feedforward kicker circuit for use with two serially connected inverters |
| US4419769A (en) * | 1976-03-08 | 1983-12-06 | General Instrument Corporation | Digital tuning system for a varactor tuner employing feedback means for improved tuning accuracy |
| JPS5399736A (en) * | 1977-02-10 | 1978-08-31 | Toshiba Corp | Semiconductor memory unit |
| JPS6023432B2 (ja) * | 1977-12-09 | 1985-06-07 | 株式会社日立製作所 | Ｍｏｓメモリ |
| JPS58192148A (ja) * | 1982-05-07 | 1983-11-09 | Hitachi Ltd | 演算処理装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2840799A (en) * | 1952-08-08 | 1958-06-24 | Arthur W Holt | Very rapid access memory for electronic computers |
| US3461312A (en) * | 1964-10-13 | 1969-08-12 | Ibm | Signal storage circuit utilizing charge storage characteristics of field-effect transistor |
| FR1459332A (fr) * | 1964-10-13 | 1966-04-29 | Ibm | Circuit d'emmagasinage de signaux |
| US3474259A (en) * | 1965-12-17 | 1969-10-21 | Singer General Precision | Sample and hold circuit |
| US3480796A (en) * | 1966-12-14 | 1969-11-25 | North American Rockwell | Mos transistor driver using a control signal |
| US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
-
1970
- 1970-01-23 GB GB1296067D patent/GB1296067A/en not_active Expired
- 1970-02-10 FR FR707004683A patent/FR2049055B1/fr not_active Expired
- 1970-03-13 DE DE2012090A patent/DE2012090C3/de not_active Expired
-
1972
- 1972-11-13 US US00305936A patent/US3765003A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998939A (en:Method) * | 1973-01-23 | 1974-09-19 | ||
| JPS49115439A (en:Method) * | 1973-02-20 | 1974-11-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2049055A1 (en:Method) | 1971-03-26 |
| DE2012090B2 (de) | 1977-09-15 |
| FR2049055B1 (en:Method) | 1973-07-13 |
| DE2012090C3 (de) | 1978-05-11 |
| DE2012090A1 (de) | 1970-10-08 |
| US3765003A (en) | 1973-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |