GB1290491A - - Google Patents
Info
- Publication number
- GB1290491A GB1290491A GB1290491DA GB1290491A GB 1290491 A GB1290491 A GB 1290491A GB 1290491D A GB1290491D A GB 1290491DA GB 1290491 A GB1290491 A GB 1290491A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- silicon
- gas phase
- phase reaction
- catalytic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 4
- 238000010574 gas phase reaction Methods 0.000 abstract 4
- 230000003197 catalytic effect Effects 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 101100188552 Arabidopsis thaliana OCT3 gene Proteins 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003054 catalyst Substances 0.000 abstract 2
- 239000000376 reactant Substances 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 238000003746 solid phase reaction Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 abstract 1
- PSKKDVHUTARKJJ-UHFFFAOYSA-N [Ta].[Mo].[V].[Ti] Chemical compound [Ta].[Mo].[V].[Ti] PSKKDVHUTARKJJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 235000011089 carbon dioxide Nutrition 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910002027 silica gel Inorganic materials 0.000 abstract 1
- 239000000741 silica gel Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
1290491 Silicon nitride and silicon oxide films T YAMAZAKI 3 Oct 1969 [3 Oct 1968] 48750/69 Heading C1A An electrically insulating or semi-conductive film is deposited on a substrate by a gas phase reaction or by a solid phase/gas phase reaction and a body of catalytic material is located at a distance of 1 mm. to 1 metre from the substrate surface, said catalytic material being Pt, Pd, reduced nickel, cobalt, chromium, titanium vanadium molybdenum tantalum, aluminiumnickel alloys, stainless steel, platinum silicon alloys, or oxides thereof, alumina, silica gel, and mixtures thereof; and the reactant gases are brought into contact with the body of catalytic material and thereby chemically activated, said reactant gases in (a) the gas phase reaction containing a hydride, nitride, or oxide and a source of silicon or other metallic element of the insulating or semi-conductive film to be formed and in (b) the gas phase/solid phase reaction being oxygen, water vapour, carbonic acid gas, hydrogen peroxide or nitrogen dioxide, the reaction of the chemically activated gases with each other or with the substrate causing the deposition or formation of the desired film on the surface of the substrate. The substrate may be a single crystal substance selected from Si, Ge, sapphire and GaAs, or a non-crystalline substance selected from ceramics or a film of amorphous SiO 2 or Si 3 N 4 . The catalyst may be particulate, or may be a gauze or net. In the preferred embodiment the distance between catalyst and substrate is 1 mm. to 10 cm. SiO 2 may be formed using SiH 4 , SiHCl 2 , and SiCl 4 , with steam, CO 2 , H 2 O 2 or N 2 O 4 . Si 3 N 4 may be formed using SiH 4 , SiCl 4 , with NH 3 or N 2 H 4 . a layer of SiO 2 may be formed by reacting O 2 , water vapour, hydrogen peroxide, N 2 O 4 or CO 2 with a silicide stain on a silicon substrate. A layer of Si 3 N 4 may be formed by reacting NH 3 or N 2 H 4 with a similar stain.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7197268A JPS4912033B1 (en) | 1968-10-03 | 1968-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1290491A true GB1290491A (en) | 1972-09-27 |
Family
ID=13475875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1290491D Expired GB1290491A (en) | 1968-10-03 | 1969-10-03 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4912033B1 (en) |
| FR (1) | FR2019759A1 (en) |
| GB (1) | GB1290491A (en) |
| NL (1) | NL6908705A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2148328A (en) * | 1983-08-16 | 1985-05-30 | Canon Kk | Chemical vapour deposition process |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230228U (en) * | 1975-08-21 | 1977-03-03 | ||
| FR2547775B1 (en) * | 1983-06-23 | 1987-12-18 | Metalem Sa | METHOD FOR DECORATING AN ARTICLE, APPLICATION OF A PROCESS FOR TREATING A SILICON ELEMENT, USE OF A TREATED SILICON PLATE AND DECORATED ARTICLE |
| US6331329B1 (en) * | 1999-05-17 | 2001-12-18 | University Of Massachusetts | Surface modification using hydridosilanes to prepare monolayers |
-
1968
- 1968-10-03 JP JP7197268A patent/JPS4912033B1/ja active Pending
-
1969
- 1969-06-06 NL NL6908705A patent/NL6908705A/xx unknown
- 1969-06-06 FR FR6918688A patent/FR2019759A1/fr not_active Withdrawn
- 1969-10-03 GB GB1290491D patent/GB1290491A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2148328A (en) * | 1983-08-16 | 1985-05-30 | Canon Kk | Chemical vapour deposition process |
| FR2555614A1 (en) * | 1983-08-16 | 1985-05-31 | Canon Kk | PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION |
| US4835005A (en) * | 1983-08-16 | 1989-05-30 | Canon Kabushiki Kaishi | Process for forming deposition film |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6908705A (en) | 1970-04-07 |
| JPS4912033B1 (en) | 1974-03-20 |
| FR2019759A1 (en) | 1970-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Claassen et al. | The deposition of silicon from silane in a low-pressure hot-wall system | |
| Utriainen et al. | Studies of NiO thin film formation by atomic layer epitaxy | |
| GB1233908A (en) | ||
| KR960002873A (en) | Thin film transistor and method of manufacturing the same | |
| GB1346938A (en) | Reactors and method of manufacture of semiconductor devices using such a reactor | |
| EP0174743A3 (en) | Process for transition metal nitrides thin film deposition | |
| GB1251631A (en) | ||
| GB1290491A (en) | ||
| GB1306988A (en) | Reaction vessels for the preparation of semiconductor devices | |
| CN101024904A (en) | Method for synthesizing single crystal beta Si3N4 nano wire using nano silicon-wire as formboard | |
| GB1236913A (en) | Manufacture of silicon carbide | |
| Amphlett | The catalytic decomposition of nitrous oxide in a large excess of oxygen | |
| GB1206500A (en) | Manufacturing silicon carbide | |
| Brayner et al. | Hydrazine decomposition over niobium oxynitride with macropores generation | |
| Hirano et al. | The reduction of nitric oxide by hydrogen over Pt, Rh and Pt-Rh single crystal surfaces | |
| Morosanu et al. | Mechanism of the chemical vapour deposition of Si3N4 films from SiH2Cl2 and NH3 under diffusion-controlled conditions | |
| GB1106596A (en) | Improvements in or relating to the production of oxide layers on semiconductor crystals | |
| JPS6226569B2 (en) | ||
| Chapple-Sokol et al. | Substrate-dependent growth of atmospheric pressure chemically vapor deposited silicon dioxide from dichlorosilane and oxygen | |
| US4172754A (en) | Synthesis of aluminum nitride | |
| JP2002237737A (en) | Substrate for surface acoustic wave device and method for manufacturing the substrate and surface acoustic wave device using the substrate | |
| JPH05208801A (en) | Method for producing synthetic gas from methane-containing gas and carbon dioxide-containing gas | |
| GB1320416A (en) | Manufacture of hollow bodies of semiconductor material | |
| JPS6477924A (en) | Manufacture of semiconductor device | |
| JPS6140034B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLE | Entries relating assignments, transmissions, licences in the register of patents | ||
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PE20 | Patent expired after termination of 20 years |