GB1288082A - - Google Patents
Info
- Publication number
- GB1288082A GB1288082A GB1288082DA GB1288082A GB 1288082 A GB1288082 A GB 1288082A GB 1288082D A GB1288082D A GB 1288082DA GB 1288082 A GB1288082 A GB 1288082A
- Authority
- GB
- United Kingdom
- Prior art keywords
- band
- gaas
- band gap
- type
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052718 tin Inorganic materials 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76690268A | 1968-10-11 | 1968-10-11 | |
| US78745968A | 1968-12-27 | 1968-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1288082A true GB1288082A (https=) | 1972-09-06 |
Family
ID=27117815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1288082D Expired GB1288082A (https=) | 1968-10-11 | 1969-10-10 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4947316B1 (https=) |
| BE (1) | BE739896A (https=) |
| CH (1) | CH502702A (https=) |
| DE (1) | DE1949575B2 (https=) |
| FR (1) | FR2020380A1 (https=) |
| GB (1) | GB1288082A (https=) |
| NL (1) | NL159828B (https=) |
| SE (1) | SE374850B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119765014A (zh) * | 2024-12-13 | 2025-04-04 | 中国科学院半导体研究所 | 一种半导体激光器及其制备方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| DE2042517A1 (de) * | 1970-08-27 | 1972-03-02 | Pilkuhn M | Halbleiterlaser |
| DE3043581A1 (de) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung |
-
1969
- 1969-10-01 SE SE1350769D patent/SE374850B/xx unknown
- 1969-10-01 DE DE19691949575 patent/DE1949575B2/de not_active Ceased
- 1969-10-06 BE BE739896D patent/BE739896A/xx not_active IP Right Cessation
- 1969-10-07 FR FR6934184A patent/FR2020380A1/fr active Pending
- 1969-10-10 GB GB1288082D patent/GB1288082A/en not_active Expired
- 1969-10-10 CH CH1526869A patent/CH502702A/de not_active IP Right Cessation
- 1969-10-10 NL NL6915370A patent/NL159828B/xx not_active IP Right Cessation
- 1969-10-11 JP JP8074669A patent/JPS4947316B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119765014A (zh) * | 2024-12-13 | 2025-04-04 | 中国科学院半导体研究所 | 一种半导体激光器及其制备方法 |
| CN119765014B (zh) * | 2024-12-13 | 2025-10-17 | 中国科学院半导体研究所 | 一种半导体激光器及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1949575B2 (de) | 1980-03-27 |
| FR2020380A1 (https=) | 1970-07-10 |
| JPS4947316B1 (https=) | 1974-12-14 |
| DE1949575A1 (de) | 1970-04-23 |
| CH502702A (de) | 1971-01-31 |
| SE374850B (https=) | 1975-03-17 |
| BE739896A (https=) | 1970-03-16 |
| NL159828B (nl) | 1979-03-15 |
| NL6915370A (https=) | 1970-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3801928A (en) | Singler heterostructure junction lasers | |
| Logan et al. | Charge Multiplication in GaP p‐n Junctions | |
| GB1376910A (en) | Semiconductor bodies for semiconductor injection lasers | |
| Cusano | Identification of laser transitions in electron‐beam‐pumped GaAs | |
| Lee et al. | GaAs-GaAℓAs Injection Lasers on Semi-Insulating Substrates Using Laterally Diffused Junctions | |
| GB1223196A (en) | Light-emitting diodes and method of making same | |
| JPS60216591A (ja) | 半導体発光素子 | |
| GB1288082A (https=) | ||
| Kishino et al. | Mesa-substrate buried-heterostructure GaInAsP/InP injection lasers | |
| Goebel et al. | Optical gain spectra of InGaAsP/InP double heterostructures | |
| US3927385A (en) | Light emitting diode | |
| US4313125A (en) | Light emitting semiconductor devices | |
| Kressel et al. | Lasing Transitions in p+‐n‐n+ (AlGa) As–Ga As Heterojunction Lasers | |
| GB1378128A (en) | Semiconductor laser | |
| Vaccaro et al. | Lateral-junction vertical-cavity surface-emitting laser grown by molecular-beam epitaxy on a GaAs (311) A-oriented substrate | |
| Tsang et al. | New current injection 1.5‐μm wavelength Ga x Al y In1− x− y As/InP double‐heterostructure laser grown by molecular beam epitaxy | |
| Bar-Chaim et al. | Be implanted (GaAl) As stripe geometry lasers | |
| Harth et al. | Frequency response of GaAlAs light-emitting diodes | |
| GB1383960A (en) | Semiconductor laser | |
| Rediker | Semiconductor lasers | |
| US3493891A (en) | Avalanche breakdown semiconductor laser | |
| US4796268A (en) | Heterostructure semiconductor laser diode | |
| JPS5451491A (en) | Semiconductor laser | |
| Burnham et al. | Laser transition to band edge or to impurity states in GaAs: Ge | |
| GB1385634A (en) | Gaa1as lasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |