GB1283765A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1283765A
GB1283765A GB4515569A GB4515569A GB1283765A GB 1283765 A GB1283765 A GB 1283765A GB 4515569 A GB4515569 A GB 4515569A GB 4515569 A GB4515569 A GB 4515569A GB 1283765 A GB1283765 A GB 1283765A
Authority
GB
United Kingdom
Prior art keywords
sept
substrate
relating
semiconductor devices
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4515569A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1283765A publication Critical patent/GB1283765A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1283765 Electroluminescence PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 12 Sept 1969 [14 Sept 1968] 45155/69 Heading C4S [Also in Division H1] Each element of an electroluminescent panel for selectively displaying the digits 0-9 comprises a SiC PN junction device 23/24 formed by selectively chemically converting parts of a common Si substrate 19, the areas to be thus converted being defined by apertures in a mask 20. The conditions under which the chemical conversion is carried out are altered part-way through the process to produce the PN junctions. The substrate 19 is mounted on an Fe plate and each element carries an Au/Ta electrode on its upper surface.
GB4515569A 1968-09-14 1969-09-12 Improvements in and relating to semiconductor devices Expired GB1283765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6813192A NL6813192A (en) 1968-09-14 1968-09-14

Publications (1)

Publication Number Publication Date
GB1283765A true GB1283765A (en) 1972-08-02

Family

ID=19804663

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4515569A Expired GB1283765A (en) 1968-09-14 1969-09-12 Improvements in and relating to semiconductor devices

Country Status (6)

Country Link
BE (1) BE738835A (en)
BR (1) BR6912356D0 (en)
DE (1) DE1946285A1 (en)
FR (1) FR2018111A1 (en)
GB (1) GB1283765A (en)
NL (1) NL6813192A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates

Also Published As

Publication number Publication date
NL6813192A (en) 1970-03-17
FR2018111A1 (en) 1970-05-29
DE1946285A1 (en) 1970-03-19
BR6912356D0 (en) 1973-01-11
BE738835A (en) 1970-03-12

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed