FR2018111A1 - - Google Patents

Info

Publication number
FR2018111A1
FR2018111A1 FR6930883A FR6930883A FR2018111A1 FR 2018111 A1 FR2018111 A1 FR 2018111A1 FR 6930883 A FR6930883 A FR 6930883A FR 6930883 A FR6930883 A FR 6930883A FR 2018111 A1 FR2018111 A1 FR 2018111A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6930883A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2018111A1 publication Critical patent/FR2018111A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
FR6930883A 1968-09-14 1969-09-11 Withdrawn FR2018111A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6813192A NL6813192A (fr) 1968-09-14 1968-09-14

Publications (1)

Publication Number Publication Date
FR2018111A1 true FR2018111A1 (fr) 1970-05-29

Family

ID=19804663

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6930883A Withdrawn FR2018111A1 (fr) 1968-09-14 1969-09-11

Country Status (6)

Country Link
BE (1) BE738835A (fr)
BR (1) BR6912356D0 (fr)
DE (1) DE1946285A1 (fr)
FR (1) FR2018111A1 (fr)
GB (1) GB1283765A (fr)
NL (1) NL6813192A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2357067A1 (fr) * 1976-06-30 1978-01-27 Ibm Procede de formation de regions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs semi-conducteurs en resultant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2357067A1 (fr) * 1976-06-30 1978-01-27 Ibm Procede de formation de regions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs semi-conducteurs en resultant

Also Published As

Publication number Publication date
BE738835A (fr) 1970-03-12
NL6813192A (fr) 1970-03-17
BR6912356D0 (pt) 1973-01-11
DE1946285A1 (de) 1970-03-19
GB1283765A (en) 1972-08-02

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Legal Events

Date Code Title Description
ST Notification of lapse