GB1282135A - Semiconductor device and a method of manufacturing the same - Google Patents

Semiconductor device and a method of manufacturing the same

Info

Publication number
GB1282135A
GB1282135A GB55546/69A GB5554669A GB1282135A GB 1282135 A GB1282135 A GB 1282135A GB 55546/69 A GB55546/69 A GB 55546/69A GB 5554669 A GB5554669 A GB 5554669A GB 1282135 A GB1282135 A GB 1282135A
Authority
GB
United Kingdom
Prior art keywords
insulating film
nov
sio
semi
referred
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB55546/69A
Other languages
English (en)
Inventor
Tadashi Tsutsumi
Takeshi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1282135A publication Critical patent/GB1282135A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69396—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Formation Of Insulating Films (AREA)
GB55546/69A 1968-11-13 1969-11-13 Semiconductor device and a method of manufacturing the same Expired GB1282135A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8257868 1968-11-13
JP8360669 1969-10-21

Publications (1)

Publication Number Publication Date
GB1282135A true GB1282135A (en) 1972-07-19

Family

ID=26423612

Family Applications (1)

Application Number Title Priority Date Filing Date
GB55546/69A Expired GB1282135A (en) 1968-11-13 1969-11-13 Semiconductor device and a method of manufacturing the same

Country Status (4)

Country Link
US (1) US3663870A (https=)
DE (1) DE1956964A1 (https=)
FR (1) FR2023215B1 (https=)
GB (1) GB1282135A (https=)

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US3731163A (en) * 1972-03-22 1973-05-01 United Aircraft Corp Low voltage charge storage memory element
DE3131958A1 (de) * 1981-08-13 1983-02-24 Solarex Corp., 14001 Rockville, Md. Verfahren zur bildung eines antireflektionsueberzuges auf der oberflaeche von sonnenenergiezellen.
EP0139764B1 (en) * 1983-03-31 1989-10-18 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin-film integrated devices
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
US5254867A (en) * 1990-07-09 1993-10-19 Kabushiki Kaisha Toshiba Semiconductor devices having an improved gate
US6271069B1 (en) * 1994-03-23 2001-08-07 Agere Systems Guardian Corp. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5427630A (en) * 1994-05-09 1995-06-27 International Business Machines Corporation Mask material for low temperature selective growth of silicon or silicon alloys
US5920086A (en) * 1997-11-19 1999-07-06 International Business Machines Corporation Light emitting device
US6404027B1 (en) * 2000-02-07 2002-06-11 Agere Systems Guardian Corp. High dielectric constant gate oxides for silicon-based devices
DE10110471C2 (de) * 2001-03-05 2003-12-18 Siemens Ag Alkoholsensor nach dem Prinzip der Austrittsarbeitsmessung
DE10114956C2 (de) 2001-03-27 2003-06-18 Infineon Technologies Ag Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator
DE10156932A1 (de) * 2001-11-20 2003-05-28 Infineon Technologies Ag Verfahren zur Abscheidung dünner Praseodymoxid-Schichten mittels ALD/CVD-Verfahren
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
ES2229883B1 (es) * 2003-03-07 2006-07-01 Fabio Consejo Sup. Investig. Cientificas Procedimiento de fabricacion de peliculas de moleculas organicas conjugadas y sus aplicaciones.
DE102004019604A1 (de) 2004-04-22 2005-11-17 Siemens Ag Verfahren zur Minimierung von Querempfindlichkeiten bei FET-basierten Gassensoren
DE102004019638A1 (de) * 2004-04-22 2005-11-17 Siemens Ag FET-basierter Sensor zur Detektion von insbesondere reduzierenden Gasen, Herstellungs- und Betriebsverfahren
DE102004019641B4 (de) * 2004-04-22 2009-10-01 Micronas Gmbh FET-basierter Gassensor
DE102004019640A1 (de) * 2004-04-22 2005-11-17 Siemens Ag Verfahren zur Erhöhung der Selektivität von FET-basierten Gassensoren
EP1707952A1 (de) * 2005-03-31 2006-10-04 Micronas GmbH Gassensitiver Feldeffekttransistor mit Luftspalt und Verfahren zu dessen Herstellung
EP1715333B1 (de) * 2005-04-01 2010-07-28 Micronas GmbH Verfahren zur Signalauslesung an einem gassensitiven Feldeffekttransistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
US3470018A (en) * 1964-08-24 1969-09-30 Melpar Inc Thin film capacitor
US3386163A (en) * 1964-08-26 1968-06-04 Ibm Method for fabricating insulated-gate field effect transistor
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3387999A (en) * 1965-06-23 1968-06-11 Melpar Inc Capacitor having dysprosium oxide dielectric
US3503813A (en) * 1965-12-15 1970-03-31 Hitachi Ltd Method of making a semiconductor device
US3496433A (en) * 1966-01-03 1970-02-17 Sprague Electric Co Yttria modified barium titanate capacitor
US3491433A (en) * 1966-06-08 1970-01-27 Nippon Electric Co Method of making an insulated gate semiconductor device
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
US3567308A (en) * 1966-12-22 1971-03-02 Ibm Rare-earth chalcogenide magneto-optical elements with protective layers
US3471756A (en) * 1968-03-11 1969-10-07 Us Army Metal oxide-silicon diode containing coating of vanadium pentoxide-v2o5 deposited on n-type material with nickel electrodes
US3544865A (en) * 1968-12-20 1970-12-01 Ibm Rectifying ferromagnetic semiconductor devices and method for making same

Also Published As

Publication number Publication date
FR2023215A1 (https=) 1970-08-07
FR2023215B1 (https=) 1975-10-10
DE1956964A1 (de) 1970-06-04
US3663870A (en) 1972-05-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees