GB1278644A - Solid-state multi-region device - Google Patents

Solid-state multi-region device

Info

Publication number
GB1278644A
GB1278644A GB30177/69A GB3017769A GB1278644A GB 1278644 A GB1278644 A GB 1278644A GB 30177/69 A GB30177/69 A GB 30177/69A GB 3017769 A GB3017769 A GB 3017769A GB 1278644 A GB1278644 A GB 1278644A
Authority
GB
United Kingdom
Prior art keywords
regions
layers
region
type
sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30177/69A
Other languages
English (en)
Inventor
Reinhard Dahlberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB1278644A publication Critical patent/GB1278644A/en
Expired legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/002—Details of machines, plants or systems, using electric or magnetic effects by using magneto-caloric effects
    • F25B2321/0021—Details of machines, plants or systems, using electric or magnetic effects by using magneto-caloric effects with a static fixed magnet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Sensors (AREA)
  • Photovoltaic Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
GB30177/69A 1969-01-22 1969-06-13 Solid-state multi-region device Expired GB1278644A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691903034 DE1903034A1 (de) 1969-01-22 1969-01-22 Festkoerper-Mehrzonen-Anordnung

Publications (1)

Publication Number Publication Date
GB1278644A true GB1278644A (en) 1972-06-21

Family

ID=5723089

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30177/69A Expired GB1278644A (en) 1969-01-22 1969-06-13 Solid-state multi-region device

Country Status (8)

Country Link
JP (1) JPS493235B1 (enExample)
AU (1) AU1008870A (enExample)
BE (1) BE743285A (enExample)
CH (1) CH514934A (enExample)
DE (1) DE1903034A1 (enExample)
FR (1) FR2028840B1 (enExample)
GB (1) GB1278644A (enExample)
NL (1) NL7000582A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2899385A1 (fr) * 2006-03-31 2007-10-05 Imra Europ Sas Soc Par Actions Dispositif photovoltaique tout solide comprenant une couche d'absorbeur a base de sulfure d'antimoine
CN103363715A (zh) * 2012-03-29 2013-10-23 株式会社东芝 磁性制冷设备和磁性制冷系统

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2192380B1 (enExample) * 1972-07-13 1974-12-27 Thomson Csf
FR2432770A1 (fr) * 1978-08-02 1980-02-29 Commissariat Energie Atomique Generateur photovoltaique
EP0055735A1 (de) * 1980-07-10 1982-07-14 Zellweger Uster Ag Elektronische wärmepumpe
US4939556A (en) * 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
GB201111235D0 (en) * 2011-06-30 2011-08-17 Camfridge Ltd Multi-Material-Blade for active regenerative magneto-caloric or electro-caloricheat engines
CN111998571B (zh) * 2020-09-08 2021-12-10 南京理工大学 一种基于电磁铁移动电卡制冷器件的散热装置
CN114234474B (zh) * 2021-12-23 2023-03-31 清华大学 一种磁制冷装置以及系统装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL259446A (enExample) * 1959-12-30 1900-01-01
US3274454A (en) * 1961-09-21 1966-09-20 Mallory & Co Inc P R Semiconductor multi-stack for regulating charging of current producing cells
US3275906A (en) * 1962-08-20 1966-09-27 Nippon Electric Co Multiple hetero-layer composite semiconductor device
FR1484477A (fr) * 1965-06-29 1967-06-09 Rca Corp Nouveau dispositif semi-conducteur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2899385A1 (fr) * 2006-03-31 2007-10-05 Imra Europ Sas Soc Par Actions Dispositif photovoltaique tout solide comprenant une couche d'absorbeur a base de sulfure d'antimoine
CN103363715A (zh) * 2012-03-29 2013-10-23 株式会社东芝 磁性制冷设备和磁性制冷系统
CN103363715B (zh) * 2012-03-29 2015-11-18 株式会社东芝 磁性制冷设备和磁性制冷系统

Also Published As

Publication number Publication date
DE1903034A1 (de) 1970-08-06
JPS493235B1 (enExample) 1974-01-25
BE743285A (enExample) 1970-05-28
FR2028840B1 (enExample) 1975-01-10
FR2028840A1 (enExample) 1970-10-16
CH514934A (de) 1971-10-31
AU1008870A (en) 1971-07-08
NL7000582A (enExample) 1970-07-24

Similar Documents

Publication Publication Date Title
Xi et al. Electric field effect in high T c superconducting ultrathin YBa2Cu3O7− x films
Kobayashi et al. Crystal Structures and Electrical Properties of BEDT-TTF Coeipounds
Shivaraman et al. Hydrogen sensitivity of palladium–thin-oxide–silicon Schottky barriers
US2705767A (en) P-n junction transistor
GB1278644A (en) Solid-state multi-region device
Smith et al. HgCdTe heterojunction contact photoconductor
GB916889A (en) Multiple junction semiconductor devices
GB971261A (en) Improvements in semiconductor devices
US3105177A (en) Semiconductive device utilizing quantum-mechanical tunneling
US2717343A (en) P-n junction transistor
GB742172A (en) Improvements in barrier layer cells
Esaki et al. New Phenomenon in Semiconductor Junctions—GaAs Duplex Diodes
US3398334A (en) Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
Mannhart et al. Properties of superconducting pn junctions
US3308356A (en) Silicon carbide semiconductor device
JP3231742B2 (ja) 積層構造を用いる単電子トンネルトランジスタ
GB1197969A (en) Improvements in or relating to Voltage-Dependent Semiconductor Capacitors
Müller The first five years of high-Tc superconductivity
Xu et al. Self biased heterojunction effect of ferroelectric thin film on silicon
Hummel Electrical properties of materials
US3454847A (en) Bistable two or three terminal double injection switching element
Jing et al. Andreev reflection and the proximity effect in Auz. sbnd; YBa2Cu3O7 junctions with ultra-low interface resistance
Laibowitz et al. Electron transport in Nb-Nb oxide-Bi tunnel junctions
Sakai et al. Investigation of IV characteristics of intrinsic Josephson junctions in Bi-2223 thin films
JP2949519B2 (ja) 超伝導ベーストランジスタ

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees