GB1278644A - Solid-state multi-region device - Google Patents

Solid-state multi-region device

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Publication number
GB1278644A
GB1278644A GB30177/69A GB3017769A GB1278644A GB 1278644 A GB1278644 A GB 1278644A GB 30177/69 A GB30177/69 A GB 30177/69A GB 3017769 A GB3017769 A GB 3017769A GB 1278644 A GB1278644 A GB 1278644A
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United Kingdom
Prior art keywords
regions
layers
region
type
sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30177/69A
Inventor
Reinhard Dahlberg
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Individual
Original Assignee
Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB1278644A publication Critical patent/GB1278644A/en
Expired legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/002—Details of machines, plants or systems, using electric or magnetic effects by using magneto-caloric effects
    • F25B2321/0021—Details of machines, plants or systems, using electric or magnetic effects by using magneto-caloric effects with a static fixed magnet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

1278644 Solid state devices R DAHLBERG 13 June 1969 [22 Jan 1969] 30177/69 Headings H1A and A4D A solid state device comprises an alternating sequence of two types of region having different electrical resistances, one of the regions, region I, of each adjacent pair having a mobile charge carrier concentration of less than 10<SP>19</SP> cm<SP>-3</SP> and the other region, region II, of the pair having a corresponding concentration of greater than 10<SP>19</SP> cm<SP>-3</SP>. Each region is less than 5 x 10<SP>-3</SP> cm thick, and the two I/II interfaces on opposite sides of each type I region exhibit different thermal work functions for carriers within the type I region. There are at least ten individual regions in all. Fig. la shows an example of a sequence of N- and P-type Si layers meeting these requirements and comprising a multi-region rectifier blocking in one direction only. The shaded regions comprise the type II regions. Figs. 1b-1e (not shown) illustrate examples of alternative sequences which comprise similar rectifiers. Various different materials are referred to in the Specification for use in these examples. Fig. 2a shows a Si device including a layer sequence which exhibits blocking properties in both directions. Figs. 2b-2m (not shown) illustrate alternative sequences, with materials referred to for each sequence, having similar properties. The differential work functions on either side of the type I regions may also be achieved by the use of very thin layers of various specified materials through which tunnelling can occur. Various types of device may employ such arrangements, those referred to in the Specification including rectifiers, electronic switches, solar cells, photo-resistors, light-emitting diodes, electronic storage elements, magnetic field-dependent switches or resistors, and piezo-electric or ferro-electric elements. If very thin, < 10<SP>-5</SP> cm, layers of certain amorphous semi-conductors are used for the regions I, application of a high electric field may cause a sudden change to a crystalline phase, with a consequent increase in conductivity, the layers reverting to the amorphous phase in the presence of a current surge or when the applied field drops below a critical strength. Thermo-electric devices may also be made using such arrangements. For example, thermocouples may include legs of the form shown in Figs. la or 2a, or in accordance with Figs. 1d or 2e, 2f, 2h, 2i or 2j (not shown). Fig. 6 shows an alternative arrangement for use as a photo-thermal element. Three Si wafers are cut at 45 degrees to the plane of the various regions and mounted together, enclosed in silicon dioxide 2. Such a device is sensitive to light as well as to heat. Fig. 7 illustrates a super-conducting device in which the regions I comprise 10<SP>-5</SP> cm thick N-type strontium titanate layers I while the regions II are constituted by layers 2 of Pt and layers 3 of caesium antimonide. The different work functions on either side of each side of each layer 1 produce very high field strengths which, it is stated, give rise to super-conductivity when the device is cooled below the critical temperature. In a further embodiment, Fig. 8 (not shown) a similar device is composed of alternating layers of Ti, vapour deposited titanium dioxide, gold and'sputtered titanium dioxide, and in this case the superconductivity is used in a direction parallel to the planes of the layers. In both embodiments magnetic fields may be applied.
GB30177/69A 1969-01-22 1969-06-13 Solid-state multi-region device Expired GB1278644A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691903034 DE1903034A1 (en) 1969-01-22 1969-01-22 Solid multi-zone arrangement

Publications (1)

Publication Number Publication Date
GB1278644A true GB1278644A (en) 1972-06-21

Family

ID=5723089

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30177/69A Expired GB1278644A (en) 1969-01-22 1969-06-13 Solid-state multi-region device

Country Status (8)

Country Link
JP (1) JPS493235B1 (en)
AU (1) AU1008870A (en)
BE (1) BE743285A (en)
CH (1) CH514934A (en)
DE (1) DE1903034A1 (en)
FR (1) FR2028840B1 (en)
GB (1) GB1278644A (en)
NL (1) NL7000582A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2899385A1 (en) * 2006-03-31 2007-10-05 Imra Europ Sas Soc Par Actions Photovoltaic device e.g. domestic photovoltaic generator, for use in dwelling`s roof, has absorber material layer made of stibnite based antimony compound and provided between semiconductor layers which are not in contact with each other
CN103363715A (en) * 2012-03-29 2013-10-23 株式会社东芝 Magnetic refrigeration device and magnetic refrigeration system

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2192380B1 (en) * 1972-07-13 1974-12-27 Thomson Csf
FR2432770A1 (en) * 1978-08-02 1980-02-29 Commissariat Energie Atomique PHOTOVOLTAIC GENERATOR
WO1982000340A1 (en) * 1980-07-10 1982-02-04 Dehmelt F Electronic heat pump
US4939556A (en) * 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
GB201111235D0 (en) * 2011-06-30 2011-08-17 Camfridge Ltd Multi-Material-Blade for active regenerative magneto-caloric or electro-caloricheat engines
CN111998571B (en) * 2020-09-08 2021-12-10 南京理工大学 Heat abstractor based on electro-magnet removes electricity card refrigeration device
CN114234474B (en) * 2021-12-23 2023-03-31 清华大学 Magnetic refrigeration device and system device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL259446A (en) * 1959-12-30 1900-01-01
US3274454A (en) * 1961-09-21 1966-09-20 Mallory & Co Inc P R Semiconductor multi-stack for regulating charging of current producing cells
US3275906A (en) * 1962-08-20 1966-09-27 Nippon Electric Co Multiple hetero-layer composite semiconductor device
FR1484477A (en) * 1965-06-29 1967-06-09 Rca Corp New semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2899385A1 (en) * 2006-03-31 2007-10-05 Imra Europ Sas Soc Par Actions Photovoltaic device e.g. domestic photovoltaic generator, for use in dwelling`s roof, has absorber material layer made of stibnite based antimony compound and provided between semiconductor layers which are not in contact with each other
CN103363715A (en) * 2012-03-29 2013-10-23 株式会社东芝 Magnetic refrigeration device and magnetic refrigeration system
CN103363715B (en) * 2012-03-29 2015-11-18 株式会社东芝 Magnetic refrigeration plant and magnetic refrigeration system

Also Published As

Publication number Publication date
FR2028840B1 (en) 1975-01-10
AU1008870A (en) 1971-07-08
CH514934A (en) 1971-10-31
JPS493235B1 (en) 1974-01-25
NL7000582A (en) 1970-07-24
FR2028840A1 (en) 1970-10-16
DE1903034A1 (en) 1970-08-06
BE743285A (en) 1970-05-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees