GB1278444A - Improvements in or relating to a radiation detector comprising a semiconductor device - Google Patents
Improvements in or relating to a radiation detector comprising a semiconductor deviceInfo
- Publication number
- GB1278444A GB1278444A GB3161469A GB3161469A GB1278444A GB 1278444 A GB1278444 A GB 1278444A GB 3161469 A GB3161469 A GB 3161469A GB 3161469 A GB3161469 A GB 3161469A GB 1278444 A GB1278444 A GB 1278444A
- Authority
- GB
- United Kingdom
- Prior art keywords
- box
- detector
- thermal
- amplifier
- cryostat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000002775 capsule Substances 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229920003023 plastic Polymers 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
1278444 Semi-conductor radiation detectors PHILIPS GLOEILAMPENFABRIEKEN NV 23 June 1969 31614/69 Heading H1K A lithium-compensated radiation detector 1 of germanium (or silicon) is mounted on an aluminium plate 2 in a capsule closed by a plastics cover 3. Heat is extracted from the detector through the plate 2 and a stranded aluminium conductor 14 the remote end of which is joined to a copper termination 16. The termination is designed to plug into the end of the cold duct 19 of a cryostat. The capsule is supported within the main sealed box by a thin walled cylinder 6 provided with perforations to reduce its thermal conductance. A field-effect transistor (not shown) forming part of a pre-amplifier for the detector may be on a glass substrate 34 in thermal contact with the cooled plate 2. Other components (not shown) of the amplifier are mounted within the cylinder. The metal cap 9 of the box is attached by a pressurized indium seal to the base. The thinner part 13 of the cap through which radiation enters may be of a different metal (such as beryllium) welded to the rest of the cap. The detector may be positioned to some extent independently of the cryostat connection since the thermal termination 16 is mounted on two stainless steel tubes 20, 21 of low thermal conductivity one of which is corrugated to provide mechanical flexibility. Electrical connections to the detector and amplifier are taken to a plug 30 in the side of the box. Connections also extend through the side of the box from a tungsten, molybdenum and titanium complex filament energized when necessary during use of the detector to getter residual gases from the box. (Initial evacuation takes place through ducts 25 in the thermal connector leading to exhaust tube 17 which is pinch sealed after evacuation of the box). The lower face 33 of the box may be demountably indium sealed to a bracket forming part of the cryostat assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3161469A GB1278444A (en) | 1969-06-23 | 1969-06-23 | Improvements in or relating to a radiation detector comprising a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3161469A GB1278444A (en) | 1969-06-23 | 1969-06-23 | Improvements in or relating to a radiation detector comprising a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1278444A true GB1278444A (en) | 1972-06-21 |
Family
ID=10325784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3161469A Expired GB1278444A (en) | 1969-06-23 | 1969-06-23 | Improvements in or relating to a radiation detector comprising a semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1278444A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4880979A (en) * | 1987-02-27 | 1989-11-14 | Mitisubishi Denki Kabushiki Kaisha | Infrared ray detector |
| WO2010091779A3 (en) * | 2009-02-14 | 2010-12-09 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Heat transfer conductor |
| CN117595047A (en) * | 2023-12-08 | 2024-02-23 | 南通斯派特激光科技有限公司 | Gas laser with sealable charging and discharging structure |
-
1969
- 1969-06-23 GB GB3161469A patent/GB1278444A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4880979A (en) * | 1987-02-27 | 1989-11-14 | Mitisubishi Denki Kabushiki Kaisha | Infrared ray detector |
| WO2010091779A3 (en) * | 2009-02-14 | 2010-12-09 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Heat transfer conductor |
| CN117595047A (en) * | 2023-12-08 | 2024-02-23 | 南通斯派特激光科技有限公司 | Gas laser with sealable charging and discharging structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |