GB1263128A - Low voltage level interface circuit - Google Patents

Low voltage level interface circuit

Info

Publication number
GB1263128A
GB1263128A GB43468/69A GB4346869A GB1263128A GB 1263128 A GB1263128 A GB 1263128A GB 43468/69 A GB43468/69 A GB 43468/69A GB 4346869 A GB4346869 A GB 4346869A GB 1263128 A GB1263128 A GB 1263128A
Authority
GB
United Kingdom
Prior art keywords
transistor
bias
signal
output
threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43468/69A
Other languages
English (en)
Inventor
Arthur Francis Pfeifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of GB1263128A publication Critical patent/GB1263128A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
GB43468/69A 1968-12-13 1969-09-02 Low voltage level interface circuit Expired GB1263128A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78360368A 1968-12-13 1968-12-13

Publications (1)

Publication Number Publication Date
GB1263128A true GB1263128A (en) 1972-02-09

Family

ID=25129811

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43468/69A Expired GB1263128A (en) 1968-12-13 1969-09-02 Low voltage level interface circuit

Country Status (5)

Country Link
US (1) US3575614A (enExample)
JP (1) JPS4944296B1 (enExample)
FR (1) FR2030571A5 (enExample)
GB (1) GB1263128A (enExample)
NL (1) NL6915343A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135148A (en) * 1983-01-31 1984-08-22 Hitachi Ltd A semiconductor integrated circuit
US6236256B1 (en) 1998-03-20 2001-05-22 Sharp Kabushiki Kaisha Voltage level converters

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3736521A (en) * 1970-04-24 1973-05-29 Gen Instrument Corp Mos amplifier utilizing parasitic conduction state operation
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
US3673438A (en) * 1970-12-21 1972-06-27 Burroughs Corp Mos integrated circuit driver system
US3789312A (en) * 1972-04-03 1974-01-29 Ibm Threshold independent linear amplifier
JPS5342587B2 (enExample) * 1974-04-23 1978-11-13
US4785205A (en) * 1987-06-29 1988-11-15 Ncr Corporation High speed ECL to CMOS converter
CN110729995B (zh) * 2019-11-28 2021-07-27 华中科技大学 一种电平转换电路及电平转换方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268827A (en) * 1963-04-01 1966-08-23 Rca Corp Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability
US3443122A (en) * 1965-11-03 1969-05-06 Gen Dynamics Corp Gating circuit utilizing junction type field effect transistor as input driver to gate driver
US3449686A (en) * 1967-05-29 1969-06-10 Us Navy Variable gain amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135148A (en) * 1983-01-31 1984-08-22 Hitachi Ltd A semiconductor integrated circuit
US6236256B1 (en) 1998-03-20 2001-05-22 Sharp Kabushiki Kaisha Voltage level converters

Also Published As

Publication number Publication date
NL6915343A (enExample) 1970-06-16
JPS4944296B1 (enExample) 1974-11-27
DE1958618A1 (de) 1970-07-02
DE1958618B2 (de) 1972-11-23
US3575614A (en) 1971-04-20
FR2030571A5 (enExample) 1970-11-13

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