GB1262501A - Semiconductor devices and methods of making them - Google Patents
Semiconductor devices and methods of making themInfo
- Publication number
- GB1262501A GB1262501A GB4859/69A GB485969A GB1262501A GB 1262501 A GB1262501 A GB 1262501A GB 4859/69 A GB4859/69 A GB 4859/69A GB 485969 A GB485969 A GB 485969A GB 1262501 A GB1262501 A GB 1262501A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- region
- epitaxial layer
- layer
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 6
- 239000002019 doping agent Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB45599/71A GB1262502A (en) | 1968-02-05 | 1969-01-29 | Improvements in or relating to semiconductor devices and methods of making them |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70316568A | 1968-02-05 | 1968-02-05 | |
| US78634568A | 1968-12-23 | 1968-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1262501A true GB1262501A (en) | 1972-02-02 |
Family
ID=27107087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4859/69A Expired GB1262501A (en) | 1968-02-05 | 1969-01-29 | Semiconductor devices and methods of making them |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE727540A (enrdf_load_stackoverflow) |
| CH (1) | CH502698A (enrdf_load_stackoverflow) |
| DE (1) | DE1904505A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2001361A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1262501A (enrdf_load_stackoverflow) |
| IL (1) | IL31526A (enrdf_load_stackoverflow) |
| NL (1) | NL6901820A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3125732B1 (fr) | 2021-07-28 | 2023-06-30 | Matair | Dispositif de transfert de flux de soudure d’un module d’étuvage accéléré vers un module d’étuvage et de conservation |
-
1969
- 1969-01-28 BE BE727540D patent/BE727540A/xx unknown
- 1969-01-29 GB GB4859/69A patent/GB1262501A/en not_active Expired
- 1969-01-30 DE DE19691904505 patent/DE1904505A1/de active Pending
- 1969-01-31 IL IL31526A patent/IL31526A/xx unknown
- 1969-02-04 CH CH168369A patent/CH502698A/de not_active IP Right Cessation
- 1969-02-05 FR FR6902555A patent/FR2001361A1/fr not_active Withdrawn
- 1969-02-05 NL NL6901820A patent/NL6901820A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1904505A1 (de) | 1969-11-06 |
| NL6901820A (enrdf_load_stackoverflow) | 1969-08-07 |
| BE727540A (enrdf_load_stackoverflow) | 1969-07-01 |
| IL31526A (en) | 1971-11-29 |
| CH502698A (de) | 1971-01-31 |
| IL31526A0 (en) | 1969-03-27 |
| FR2001361A1 (enrdf_load_stackoverflow) | 1969-09-26 |
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