GB1258125A - - Google Patents
Info
- Publication number
- GB1258125A GB1258125A GB1258125DA GB1258125A GB 1258125 A GB1258125 A GB 1258125A GB 1258125D A GB1258125D A GB 1258125DA GB 1258125 A GB1258125 A GB 1258125A
- Authority
- GB
- United Kingdom
- Prior art keywords
- carrier gas
- semi
- halogen derivatives
- conductor
- main carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CS244768 | 1968-04-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1258125A true GB1258125A (de) | 1971-12-22 |
Family
ID=5361638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1258125D Expired GB1258125A (de) | 1968-04-01 | 1969-03-31 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS492787B1 (de) |
DE (1) | DE1915692A1 (de) |
GB (1) | GB1258125A (de) |
NL (1) | NL6904893A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1579481A2 (de) * | 2002-06-26 | 2005-09-28 | Semequip, Inc. | Ionenimplantationseinrichtung und verfahren zur halbleiterherstellung durch implantation von borhydrid-clusterionen |
CN1973346B (zh) * | 2002-06-26 | 2011-05-18 | 山米奎普公司 | 一种离子植入装置和一种通过植入氢化硼簇离子制造半导体的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10514432B2 (en) | 2015-02-20 | 2019-12-24 | Hitachi, Ltd. | Magnetic field adjusting method |
-
1969
- 1969-03-27 DE DE19691915692 patent/DE1915692A1/de active Pending
- 1969-03-28 NL NL6904893A patent/NL6904893A/xx unknown
- 1969-03-31 GB GB1258125D patent/GB1258125A/en not_active Expired
- 1969-04-01 JP JP2513269A patent/JPS492787B1/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1579481A2 (de) * | 2002-06-26 | 2005-09-28 | Semequip, Inc. | Ionenimplantationseinrichtung und verfahren zur halbleiterherstellung durch implantation von borhydrid-clusterionen |
EP1579481A4 (de) * | 2002-06-26 | 2008-02-27 | Semequip Inc | Ionenimplantationseinrichtung und verfahren zur halbleiterherstellung durch implantation von borhydrid-clusterionen |
US7491953B2 (en) | 2002-06-26 | 2009-02-17 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
CN1973346B (zh) * | 2002-06-26 | 2011-05-18 | 山米奎普公司 | 一种离子植入装置和一种通过植入氢化硼簇离子制造半导体的方法 |
US8071958B2 (en) | 2002-06-26 | 2011-12-06 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
US8410459B2 (en) | 2002-06-26 | 2013-04-02 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
US8618514B2 (en) | 2002-06-26 | 2013-12-31 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
Also Published As
Publication number | Publication date |
---|---|
JPS492787B1 (de) | 1974-01-22 |
DE1915692A1 (de) | 1969-12-18 |
NL6904893A (de) | 1969-10-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |