GB1255415A - Semiconductor device with improved ohmic contact - Google Patents
Semiconductor device with improved ohmic contactInfo
- Publication number
- GB1255415A GB1255415A GB01097/69A GB1109769A GB1255415A GB 1255415 A GB1255415 A GB 1255415A GB 01097/69 A GB01097/69 A GB 01097/69A GB 1109769 A GB1109769 A GB 1109769A GB 1255415 A GB1255415 A GB 1255415A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contacts
- layer
- phosphorus
- semi
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract 6
- 239000011574 phosphorus Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71542568A | 1968-03-22 | 1968-03-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1255415A true GB1255415A (en) | 1971-12-01 |
Family
ID=24873995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB01097/69A Expired GB1255415A (en) | 1968-03-22 | 1969-03-03 | Semiconductor device with improved ohmic contact |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4921462B1 (enrdf_load_stackoverflow) |
| BR (1) | BR6907437D0 (enrdf_load_stackoverflow) |
| DE (1) | DE1913712A1 (enrdf_load_stackoverflow) |
| ES (1) | ES364975A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2004483A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1255415A (enrdf_load_stackoverflow) |
| NL (1) | NL6904389A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE755371A (fr) * | 1969-08-27 | 1971-02-01 | Ibm | Contacts ohmiques pour dispositifs semi-conducteurs |
| FR2204889B1 (enrdf_load_stackoverflow) * | 1972-10-27 | 1975-03-28 | Sescosem |
-
1968
- 1968-03-20 ES ES364975A patent/ES364975A1/es not_active Expired
-
1969
- 1969-03-03 GB GB01097/69A patent/GB1255415A/en not_active Expired
- 1969-03-12 FR FR6906888A patent/FR2004483A1/fr not_active Withdrawn
- 1969-03-18 DE DE19691913712 patent/DE1913712A1/de active Pending
- 1969-03-21 NL NL6904389A patent/NL6904389A/xx unknown
- 1969-03-21 BR BR207437/69A patent/BR6907437D0/pt unknown
-
1971
- 1971-08-20 JP JP46063970A patent/JPS4921462B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4921462B1 (enrdf_load_stackoverflow) | 1974-06-01 |
| ES364975A1 (es) | 1971-02-16 |
| FR2004483A1 (fr) | 1969-11-28 |
| NL6904389A (enrdf_load_stackoverflow) | 1969-09-24 |
| DE1913712A1 (de) | 1969-10-09 |
| BR6907437D0 (pt) | 1973-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2861018A (en) | Fabrication of semiconductive devices | |
| US3909119A (en) | Guarded planar PN junction semiconductor device | |
| US3524113A (en) | Complementary pnp-npn transistors and fabrication method therefor | |
| GB1198569A (en) | Semiconductor Junction Device. | |
| GB1060303A (en) | Semiconductor element and device and method of fabricating the same | |
| GB1399163A (en) | Methods of manufacturing semiconductor devices | |
| GB1050478A (enrdf_load_stackoverflow) | ||
| US3611067A (en) | Complementary npn/pnp structure for monolithic integrated circuits | |
| GB1206308A (en) | Method of making semiconductor wafer | |
| EP0076106B1 (en) | Method for producing a bipolar transistor | |
| GB1089098A (en) | Semiconductor device | |
| GB1283133A (en) | Method of manufacturing semiconductor devices | |
| GB1332931A (en) | Methods of manufacturing a semiconductor device | |
| GB1154891A (en) | Semiconductor Devices and Methods of Manufacture | |
| GB1024359A (en) | Semiconductor structures poviding both unipolar transistor and bipolar transistor functions and method of making same | |
| US3394289A (en) | Small junction area s-m-s transistor | |
| GB1093664A (en) | Semiconductor process | |
| GB1224801A (en) | Methods of manufacturing semiconductor devices | |
| US3951693A (en) | Ion-implanted self-aligned transistor device including the fabrication method therefor | |
| GB1253820A (en) | Fabrication of field effect transistors | |
| US3974516A (en) | Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method | |
| GB1327755A (en) | Methods of manufacturing a semiconductor device | |
| GB1255415A (en) | Semiconductor device with improved ohmic contact | |
| IE33385B1 (en) | Semiconductor device and fabrication of same | |
| US3649882A (en) | Diffused alloyed emitter and the like and a method of manufacture thereof |