GB1253294A - Improvements relating to polycrystalline films - Google Patents
Improvements relating to polycrystalline filmsInfo
- Publication number
- GB1253294A GB1253294A GB0925/69A GB192569A GB1253294A GB 1253294 A GB1253294 A GB 1253294A GB 0925/69 A GB0925/69 A GB 0925/69A GB 192569 A GB192569 A GB 192569A GB 1253294 A GB1253294 A GB 1253294A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sio
- layer
- semi
- conductor
- junctions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69791168A | 1968-01-15 | 1968-01-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1253294A true GB1253294A (en) | 1971-11-10 |
Family
ID=24803096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0925/69A Expired GB1253294A (en) | 1968-01-15 | 1969-01-13 | Improvements relating to polycrystalline films |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3558374A (enExample) |
| JP (2) | JPS4822376B1 (enExample) |
| DE (1) | DE1901819C3 (enExample) |
| FR (1) | FR1603847A (enExample) |
| GB (1) | GB1253294A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3894893A (en) * | 1968-03-30 | 1975-07-15 | Kyodo Denshi Gijyutsu Kk | Method for the production of monocrystal-polycrystal semiconductor devices |
| JPS503780A (enExample) * | 1973-05-15 | 1975-01-16 | ||
| US3874920A (en) * | 1973-06-28 | 1975-04-01 | Ibm | Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity |
| DE2449688C3 (de) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
| JPS51126587U (enExample) * | 1975-04-09 | 1976-10-13 | ||
| DE2536174C3 (de) * | 1975-08-13 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente |
| US4157418A (en) * | 1978-02-08 | 1979-06-05 | Minnesota Mining And Manufacturing Company | Acrylic functional aminocarboxylic acids and derivatives as components of pressure sensitive adhesives |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| US4467519A (en) * | 1982-04-01 | 1984-08-28 | International Business Machines Corporation | Process for fabricating polycrystalline silicon film resistors |
| DE3725358A1 (de) * | 1987-07-30 | 1989-02-09 | Telog Systems Gmbh | Vorrichtung und verfahren zur oberflaechenbehandlung von materialien |
| US5164338A (en) * | 1988-04-28 | 1992-11-17 | U.S. Philips Corporation | Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer |
| US4975469A (en) * | 1989-03-20 | 1990-12-04 | Amoco Corporation | Oriented porous polypropylene films |
| US5176953A (en) * | 1990-12-21 | 1993-01-05 | Amoco Corporation | Oriented polymeric microporous films |
| US6690103B1 (en) | 1999-07-21 | 2004-02-10 | Alan K. Uke | Incandescent light bulb with variable pitch coiled filament |
-
1968
- 1968-01-15 US US697911A patent/US3558374A/en not_active Expired - Lifetime
- 1968-12-13 FR FR1603847D patent/FR1603847A/fr not_active Expired
-
1969
- 1969-01-10 JP JP44001763A patent/JPS4822376B1/ja active Pending
- 1969-01-13 GB GB0925/69A patent/GB1253294A/en not_active Expired
- 1969-01-15 DE DE1901819A patent/DE1901819C3/de not_active Expired
-
1976
- 1976-04-13 JP JP4096776A patent/JPS5322422B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1603847A (enExample) | 1971-06-07 |
| US3558374A (en) | 1971-01-26 |
| DE1901819A1 (de) | 1969-09-11 |
| DE1901819B2 (de) | 1979-11-08 |
| DE1901819C3 (de) | 1980-07-24 |
| JPS5322422B1 (enExample) | 1978-07-08 |
| JPS4822376B1 (enExample) | 1973-07-05 |
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