GB1247880A - Leakage controlled electric charge switching and storing circuitry - Google Patents

Leakage controlled electric charge switching and storing circuitry

Info

Publication number
GB1247880A
GB1247880A GB45999/68A GB4599968A GB1247880A GB 1247880 A GB1247880 A GB 1247880A GB 45999/68 A GB45999/68 A GB 45999/68A GB 4599968 A GB4599968 A GB 4599968A GB 1247880 A GB1247880 A GB 1247880A
Authority
GB
United Kingdom
Prior art keywords
voltage
leakage
charge
feedback
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45999/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1247880A publication Critical patent/GB1247880A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier

Landscapes

  • Electronic Switches (AREA)
  • Amplifiers (AREA)
GB45999/68A 1967-10-30 1968-09-27 Leakage controlled electric charge switching and storing circuitry Expired GB1247880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67889667A 1967-10-30 1967-10-30

Publications (1)

Publication Number Publication Date
GB1247880A true GB1247880A (en) 1971-09-29

Family

ID=24724745

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45999/68A Expired GB1247880A (en) 1967-10-30 1968-09-27 Leakage controlled electric charge switching and storing circuitry

Country Status (4)

Country Link
US (1) US3521141A (enExample)
DE (1) DE1802501B2 (enExample)
FR (1) FR1579313A (enExample)
GB (1) GB1247880A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298981A (en) * 1992-09-08 1996-09-18 Fujitsu Ltd Integrated voltage storage circuit with bootstrapped MOS transistor switch
USRE36014E (en) * 1992-09-08 1998-12-29 Fujitsu Limited Voltage storage circuits
WO2004053887A1 (de) * 2002-12-10 2004-06-24 Infineon Technologies Ag Schaltungsanordnung zur leckstrombegrenzung, abtast-halte-schaltung mit der schaltungsanordnung sowie ladungspumpenschaltung mit der schaltungsanordnung
GB2449276A (en) * 2007-05-15 2008-11-19 Thomas William Bach A low-capacitance transmit-receive switch for an EIT electrode

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1191639B (de) * 1961-01-17 1965-04-22 Dunlop Rubber Co Verstaerkungseinlage fuer Foerderbaender, Treibriemen od. dgl. in Form eines Gewebes
FR2100550B2 (enExample) * 1970-05-26 1973-05-25 Commissariat Energie Atomique
US3582975A (en) * 1969-04-17 1971-06-01 Bell Telephone Labor Inc Gateable coupling circuit
US3612773A (en) * 1969-07-22 1971-10-12 Bell Telephone Labor Inc Electronic frequency switching circuit for multifrequency signal generator
US3582678A (en) * 1969-08-06 1971-06-01 Sperry Rand Corp Pulse interval measurement apparatus
JPS5015669B1 (enExample) * 1970-09-30 1975-06-06
JPS5244180B1 (enExample) * 1970-11-05 1977-11-05
US3718915A (en) * 1971-06-07 1973-02-27 Motorola Inc Opposite conductivity gating circuit for refreshing information in semiconductor memory cells
US3735149A (en) * 1971-07-01 1973-05-22 Nippon Electric Co Operational circuit
US3742252A (en) * 1972-01-06 1973-06-26 Woodward Governor Co Signal conversion circuit
GB1415516A (en) * 1972-02-25 1975-11-26 Ultra Electronics Ltd Capacitive computer circuits
US3789244A (en) * 1972-09-08 1974-01-29 Spacetac Inc Fet analog multiplex switch
US3843954A (en) * 1972-12-29 1974-10-22 Ibm High-voltage integrated driver circuit and memory embodying same
JPS5010545A (enExample) * 1973-05-24 1975-02-03
US3891840A (en) * 1973-12-14 1975-06-24 Information Storage Systems Low leakage current integrator
JPS51122721A (en) * 1975-04-21 1976-10-27 Hitachi Ltd Boosting circuit
US4001604A (en) * 1975-04-25 1977-01-04 The United States Of America As Represented By The Secretary Of The Army Peak value detector
US4034239A (en) * 1976-07-06 1977-07-05 Rca Corporation Capacitance memories operated with intermittently-energized integrated circuits
US4328455A (en) * 1978-10-06 1982-05-04 General Eastern Instruments Corporation Capacitor storage circuit
US4311930A (en) * 1979-12-17 1982-01-19 Fairchild Camera & Instrument Corp. Voltage protection circuit for binary data-storage device
US4446390A (en) * 1981-12-28 1984-05-01 Motorola, Inc. Low leakage CMOS analog switch circuit
US4523111A (en) * 1983-03-07 1985-06-11 General Electric Company Normally-off, gate-controlled electrical circuit with low on-resistance
US4544854A (en) * 1983-08-04 1985-10-01 Motorola, Inc. Analog switch structure having low leakage current
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors
US4763027A (en) * 1985-05-07 1988-08-09 National Semiconductor Corporation Deglitching network for digital logic circuits
US4785207A (en) * 1987-01-21 1988-11-15 Hughes Aircraft Company Leakage regulator circuit for a field effect transistor
DE3717922A1 (de) * 1987-05-27 1988-12-08 Sgs Halbleiterbauelemente Gmbh Als integrierte schaltung ausgebildete schaltereinrichtung
US5010408A (en) * 1989-09-25 1991-04-23 Eastman Kodak Company Doubly correlated sample and hold circuit
US4987321A (en) * 1989-09-25 1991-01-22 Eastman Kodak Company Processing circuit for image sensor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3075086A (en) * 1958-01-13 1963-01-22 Raytheon Co Diode bridge sampler and capacitor storage device with feed-back means preventing drift caused by diode leakage
US3413491A (en) * 1964-09-21 1968-11-26 Beckman Instruments Inc Peak holder employing field-effect transistor
US3393325A (en) * 1965-07-26 1968-07-16 Gen Micro Electronics Inc High speed inverter
US3395291A (en) * 1965-09-07 1968-07-30 Gen Micro Electronics Inc Circuit employing a transistor as a load element
US3430072A (en) * 1966-01-11 1969-02-25 Us Navy Sample and hold circuit
US3406346A (en) * 1966-04-20 1968-10-15 Gen Instrument Corp Shift register system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298981A (en) * 1992-09-08 1996-09-18 Fujitsu Ltd Integrated voltage storage circuit with bootstrapped MOS transistor switch
GB2298981B (en) * 1992-09-08 1997-03-26 Fujitsu Ltd Voltage storage circuits
USRE36014E (en) * 1992-09-08 1998-12-29 Fujitsu Limited Voltage storage circuits
WO2004053887A1 (de) * 2002-12-10 2004-06-24 Infineon Technologies Ag Schaltungsanordnung zur leckstrombegrenzung, abtast-halte-schaltung mit der schaltungsanordnung sowie ladungspumpenschaltung mit der schaltungsanordnung
GB2449276A (en) * 2007-05-15 2008-11-19 Thomas William Bach A low-capacitance transmit-receive switch for an EIT electrode

Also Published As

Publication number Publication date
DE1802501A1 (de) 1969-05-14
US3521141A (en) 1970-07-21
DE1802501C3 (enExample) 1979-10-18
FR1579313A (enExample) 1969-08-22
DE1802501B2 (de) 1979-02-08

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