GB1245765A - Surface diffused semiconductor devices - Google Patents
Surface diffused semiconductor devicesInfo
- Publication number
- GB1245765A GB1245765A GB4611568A GB4611568A GB1245765A GB 1245765 A GB1245765 A GB 1245765A GB 4611568 A GB4611568 A GB 4611568A GB 4611568 A GB4611568 A GB 4611568A GB 1245765 A GB1245765 A GB 1245765A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- buried electrode
- collector
- emitter
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- 238000002161 passivation Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67522667A | 1967-10-13 | 1967-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1245765A true GB1245765A (en) | 1971-09-08 |
Family
ID=24709564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4611568A Expired GB1245765A (en) | 1967-10-13 | 1968-09-27 | Surface diffused semiconductor devices |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4841391B1 (pt) |
| BR (1) | BR6802913D0 (pt) |
| CH (1) | CH495629A (pt) |
| DE (2) | DE1803026C3 (pt) |
| FR (1) | FR1587469A (pt) |
| GB (1) | GB1245765A (pt) |
| NL (1) | NL6814111A (pt) |
| SE (1) | SE352775B (pt) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1944280B2 (de) * | 1969-09-01 | 1971-06-09 | Monolitisch integrierte festkoerperschaltung aus feldeffekttransistoren | |
| FR2420209A1 (fr) * | 1978-03-14 | 1979-10-12 | Thomson Csf | Structure de circuit integre fonctionnant a haute tension |
| DE3333242C2 (de) * | 1982-09-13 | 1995-08-17 | Nat Semiconductor Corp | Monolithisch integrierter Halbleiterschaltkreis |
| US5204545A (en) * | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
| JPH0783048B2 (ja) * | 1989-11-22 | 1995-09-06 | 三菱電機株式会社 | 半導体装置における電界集中防止構造およびその形成方法 |
| US5606195A (en) * | 1995-12-26 | 1997-02-25 | Hughes Electronics | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL293292A (pt) * | 1962-06-11 | |||
| US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
| CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
-
1968
- 1968-09-27 GB GB4611568A patent/GB1245765A/en not_active Expired
- 1968-10-02 NL NL6814111A patent/NL6814111A/xx unknown
- 1968-10-07 BR BR20291368A patent/BR6802913D0/pt unknown
- 1968-10-10 CH CH1514268A patent/CH495629A/de not_active IP Right Cessation
- 1968-10-11 FR FR1587469D patent/FR1587469A/fr not_active Expired
- 1968-10-12 JP JP7456468A patent/JPS4841391B1/ja active Pending
- 1968-10-14 DE DE19681803026 patent/DE1803026C3/de not_active Expired
- 1968-10-14 DE DE19686802215 patent/DE6802215U/de not_active Expired
- 1968-10-14 SE SE1383868A patent/SE352775B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE352775B (pt) | 1973-01-08 |
| BR6802913D0 (pt) | 1973-01-04 |
| DE6802215U (de) | 1972-04-06 |
| JPS4841391B1 (pt) | 1973-12-06 |
| CH495629A (de) | 1970-08-31 |
| DE1803026B2 (de) | 1973-09-20 |
| DE1803026A1 (de) | 1971-02-11 |
| DE1803026C3 (de) | 1981-09-10 |
| FR1587469A (pt) | 1970-03-20 |
| NL6814111A (pt) | 1969-04-15 |
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