GB1245765A - Surface diffused semiconductor devices - Google Patents

Surface diffused semiconductor devices

Info

Publication number
GB1245765A
GB1245765A GB46115/68A GB4611568A GB1245765A GB 1245765 A GB1245765 A GB 1245765A GB 46115/68 A GB46115/68 A GB 46115/68A GB 4611568 A GB4611568 A GB 4611568A GB 1245765 A GB1245765 A GB 1245765A
Authority
GB
United Kingdom
Prior art keywords
region
buried electrode
collector
emitter
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46115/68A
Other languages
English (en)
Inventor
Dale Marius Brown
William Ernest Engeler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1245765A publication Critical patent/GB1245765A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/111Field plates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/40Vertical BJTs
    • H10D10/421Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
GB46115/68A 1967-10-13 1968-09-27 Surface diffused semiconductor devices Expired GB1245765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67522667A 1967-10-13 1967-10-13

Publications (1)

Publication Number Publication Date
GB1245765A true GB1245765A (en) 1971-09-08

Family

ID=24709564

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46115/68A Expired GB1245765A (en) 1967-10-13 1968-09-27 Surface diffused semiconductor devices

Country Status (8)

Country Link
JP (1) JPS4841391B1 (enrdf_load_stackoverflow)
BR (1) BR6802913D0 (enrdf_load_stackoverflow)
CH (1) CH495629A (enrdf_load_stackoverflow)
DE (2) DE6802215U (enrdf_load_stackoverflow)
FR (1) FR1587469A (enrdf_load_stackoverflow)
GB (1) GB1245765A (enrdf_load_stackoverflow)
NL (1) NL6814111A (enrdf_load_stackoverflow)
SE (1) SE352775B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1944280B2 (de) * 1969-09-01 1971-06-09 Monolitisch integrierte festkoerperschaltung aus feldeffekttransistoren
FR2420209A1 (fr) * 1978-03-14 1979-10-12 Thomson Csf Structure de circuit integre fonctionnant a haute tension
DE3333242C2 (de) * 1982-09-13 1995-08-17 Nat Semiconductor Corp Monolithisch integrierter Halbleiterschaltkreis
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same
JPH0783048B2 (ja) * 1989-11-22 1995-09-06 三菱電機株式会社 半導体装置における電界集中防止構造およびその形成方法
US5606195A (en) * 1995-12-26 1997-02-25 Hughes Electronics High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (enrdf_load_stackoverflow) * 1962-06-11
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes

Also Published As

Publication number Publication date
FR1587469A (enrdf_load_stackoverflow) 1970-03-20
CH495629A (de) 1970-08-31
DE1803026B2 (de) 1973-09-20
DE6802215U (de) 1972-04-06
DE1803026A1 (de) 1971-02-11
SE352775B (enrdf_load_stackoverflow) 1973-01-08
NL6814111A (enrdf_load_stackoverflow) 1969-04-15
JPS4841391B1 (enrdf_load_stackoverflow) 1973-12-06
DE1803026C3 (de) 1981-09-10
BR6802913D0 (pt) 1973-01-04

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