GB1228700A - - Google Patents
Info
- Publication number
- GB1228700A GB1228700A GB1228700DA GB1228700A GB 1228700 A GB1228700 A GB 1228700A GB 1228700D A GB1228700D A GB 1228700DA GB 1228700 A GB1228700 A GB 1228700A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- insulating layer
- silicon
- conductor
- conductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
- H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681764766 DE1764766C3 (de) | 1968-08-01 | Verfahren zum Herstellen eines Transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1228700A true GB1228700A (https=) | 1971-04-15 |
Family
ID=5698122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1228700D Expired GB1228700A (https=) | 1968-08-01 | 1969-07-17 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3673012A (https=) |
| FR (1) | FR2014870A7 (https=) |
| GB (1) | GB1228700A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3895977A (en) * | 1973-12-20 | 1975-07-22 | Harris Corp | Method of fabricating a bipolar transistor |
-
1969
- 1969-07-17 GB GB1228700D patent/GB1228700A/en not_active Expired
- 1969-07-29 US US845773A patent/US3673012A/en not_active Expired - Lifetime
- 1969-07-31 FR FR6926280A patent/FR2014870A7/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1764766A1 (de) | 1971-11-11 |
| FR2014870A7 (https=) | 1970-04-24 |
| US3673012A (en) | 1972-06-27 |
| DE1764766B2 (de) | 1976-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1375355A (https=) | ||
| ES417610A1 (es) | Un metodo de fabricacion de un dispositivo semiconductor. | |
| ES360408A1 (es) | Un dispositivo semiconductor. | |
| GB988903A (en) | Semiconductor devices and methods of making same | |
| ES393035A1 (es) | Un dispositivo semiconductor. | |
| GB1501483A (en) | Semiconductor device | |
| GB1125650A (en) | Insulating layers and devices incorporating such layers | |
| GB1228700A (https=) | ||
| GB1106787A (en) | Improvements in semiconductor devices | |
| GB1220854A (en) | Improvements in transistors | |
| GB1153052A (en) | Manufacture of Semiconductor Devices | |
| GB1099049A (en) | A method of manufacturing transistors | |
| GB1086856A (en) | Improvements in or relating to methods of manufacturing semi-conductor devices | |
| ES384149A1 (es) | Un dispositivo semiconductor que tiene una pelicula protec-tora que cubre un extremo opuesto de una union positiva ne- gativa. | |
| GB1074816A (en) | Improvements relating to semi-conductor devices | |
| GB1214180A (en) | Semiconductor devices | |
| GB1234544A (https=) | ||
| GB958247A (en) | Semiconductor devices and methods of fabricating same | |
| GB1503570A (en) | Semiconductor devices | |
| GB1280491A (en) | Semiconductor device | |
| GB1081509A (en) | Transistor | |
| GB1252281A (https=) | ||
| GB1386100A (en) | Junction devices | |
| GB1045514A (en) | Simultaneous double diffusion process | |
| GB1101888A (en) | Improvements to semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |