GB1222087A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1222087A
GB1222087A GB31629/67A GB3162967A GB1222087A GB 1222087 A GB1222087 A GB 1222087A GB 31629/67 A GB31629/67 A GB 31629/67A GB 3162967 A GB3162967 A GB 3162967A GB 1222087 A GB1222087 A GB 1222087A
Authority
GB
United Kingdom
Prior art keywords
gate
oxide
diborane
wafer
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31629/67A
Other languages
English (en)
Inventor
Michael Albert Stacey
Michael Murray Bertioli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to GB31629/67A priority Critical patent/GB1222087A/en
Priority to FR1592551D priority patent/FR1592551A/fr
Priority to DE19681764633 priority patent/DE1764633A1/de
Priority to NL6809770A priority patent/NL6809770A/xx
Publication of GB1222087A publication Critical patent/GB1222087A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3438Doping during depositing
    • H10P14/3441Conductivity type
    • H10P14/3442N-type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3438Doping during depositing
    • H10P14/3441Conductivity type
    • H10P14/3444P-type

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Thyristors (AREA)
GB31629/67A 1967-07-10 1967-07-10 Thyristors Expired GB1222087A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB31629/67A GB1222087A (en) 1967-07-10 1967-07-10 Thyristors
FR1592551D FR1592551A (https=) 1967-07-10 1968-07-09
DE19681764633 DE1764633A1 (de) 1967-07-10 1968-07-09 Thyristor
NL6809770A NL6809770A (https=) 1967-07-10 1968-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB31629/67A GB1222087A (en) 1967-07-10 1967-07-10 Thyristors

Publications (1)

Publication Number Publication Date
GB1222087A true GB1222087A (en) 1971-02-10

Family

ID=10326033

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31629/67A Expired GB1222087A (en) 1967-07-10 1967-07-10 Thyristors

Country Status (4)

Country Link
DE (1) DE1764633A1 (https=)
FR (1) FR1592551A (https=)
GB (1) GB1222087A (https=)
NL (1) NL6809770A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701696A (en) * 1969-08-20 1972-10-31 Gen Electric Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor

Also Published As

Publication number Publication date
DE1764633A1 (de) 1972-02-17
FR1592551A (https=) 1970-05-19
NL6809770A (https=) 1969-01-14

Similar Documents

Publication Publication Date Title
GB1116209A (en) Improvements in semiconductor structures
US3600651A (en) Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US3664896A (en) Deposited silicon diffusion sources
US3502951A (en) Monolithic complementary semiconductor device
GB1147599A (en) Method for fabricating semiconductor devices in integrated circuits
GB1023565A (en) Complementary transistor structure
US3749614A (en) Fabrication of semiconductor devices
US3961354A (en) Mesa type thyristor and its making method
US3906541A (en) Field effect transistor devices and methods of making same
US3319311A (en) Semiconductor devices and their fabrication
GB1102164A (en) Selective impurity diffusion
GB1263127A (en) Integrated circuits
GB1024359A (en) Semiconductor structures poviding both unipolar transistor and bipolar transistor functions and method of making same
US3725145A (en) Method for manufacturing semiconductor devices
GB1224801A (en) Methods of manufacturing semiconductor devices
US3582410A (en) Process for producing metal base semiconductor devices
GB1161351A (en) Improvements in and relating to Semiconductor Devices
GB1222087A (en) Thyristors
US3974516A (en) Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method
US3892609A (en) Production of mis integrated devices with high inversion voltage to threshold voltage ratios
GB1361303A (en) Manufacture of semiconductor devices
US3556878A (en) Method of producing a thyristor device
US3875657A (en) Dielectrically isolated semiconductor devices
GB995700A (en) Double epitaxial layer semiconductor structures
GB1150934A (en) Improvements in and relating to semiconductor devices.