GB1218603A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB1218603A GB1218603A GB2135/68A GB213568A GB1218603A GB 1218603 A GB1218603 A GB 1218603A GB 2135/68 A GB2135/68 A GB 2135/68A GB 213568 A GB213568 A GB 213568A GB 1218603 A GB1218603 A GB 1218603A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- highly doped
- diffused
- junction
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6700755A NL6700755A (enrdf_load_stackoverflow) | 1967-01-18 | 1967-01-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1218603A true GB1218603A (en) | 1971-01-06 |
Family
ID=19799016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2135/68A Expired GB1218603A (en) | 1967-01-18 | 1968-01-15 | Improvements in and relating to semiconductor devices |
Country Status (11)
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2174540A (en) * | 1985-05-02 | 1986-11-05 | Texas Instruments Ltd | Integrated circuits |
US5677209A (en) * | 1995-04-21 | 1997-10-14 | Daewoo Electronics Co., Ltd. | Method for fabricating a vertical bipolar transistor |
-
1967
- 1967-01-18 NL NL6700755A patent/NL6700755A/xx unknown
- 1967-12-20 DK DK640567AA patent/DK119667B/da unknown
-
1968
- 1968-01-13 DE DE1968N0031956 patent/DE1639342B2/de active Granted
- 1968-01-15 AT AT38268A patent/AT300037B/de not_active IP Right Cessation
- 1968-01-15 GB GB2135/68A patent/GB1218603A/en not_active Expired
- 1968-01-15 NO NO0171/68A patent/NO124401B/no unknown
- 1968-01-15 SE SE481/68A patent/SE345555B/xx unknown
- 1968-01-15 CH CH56268A patent/CH470764A/de not_active IP Right Cessation
- 1968-01-16 ES ES349367A patent/ES349367A1/es not_active Expired
- 1968-01-16 BE BE709451D patent/BE709451A/xx unknown
- 1968-01-17 FR FR1562929D patent/FR1562929A/fr not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2174540A (en) * | 1985-05-02 | 1986-11-05 | Texas Instruments Ltd | Integrated circuits |
US5182469A (en) * | 1985-05-02 | 1993-01-26 | Texas Instruments Incorporated | Integrated circuit having bipolar transistors and field effect transistors respectively using potentials of opposite polarities relative to substrate |
US5677209A (en) * | 1995-04-21 | 1997-10-14 | Daewoo Electronics Co., Ltd. | Method for fabricating a vertical bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
CH470764A (de) | 1969-03-31 |
FR1562929A (enrdf_load_stackoverflow) | 1969-04-11 |
SE345555B (enrdf_load_stackoverflow) | 1972-05-29 |
NL6700755A (enrdf_load_stackoverflow) | 1968-07-19 |
DE1639342B2 (de) | 1977-06-02 |
BE709451A (enrdf_load_stackoverflow) | 1968-07-16 |
AT300037B (de) | 1972-07-10 |
NO124401B (enrdf_load_stackoverflow) | 1972-04-10 |
DE1639342A1 (de) | 1971-02-04 |
ES349367A1 (es) | 1969-09-16 |
DK119667B (da) | 1971-02-08 |
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