GB1195547A - Improvements in or relating to Luminescent Diodes - Google Patents
Improvements in or relating to Luminescent DiodesInfo
- Publication number
- GB1195547A GB1195547A GB5068667A GB5068667A GB1195547A GB 1195547 A GB1195547 A GB 1195547A GB 5068667 A GB5068667 A GB 5068667A GB 5068667 A GB5068667 A GB 5068667A GB 1195547 A GB1195547 A GB 1195547A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- exit surface
- focal point
- diode
- nov
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005553 drilling Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
1,195,547. Electroluminescence. SIEMENS A.G. 8 Nov., 1967 [9 Nov., 1966], No. 50686/67. Heading C4S. [Also in Division H1] A luminescent diode comprises a carrier crystal body, e.g. an A<SP>m</SP>B<SP>V</SP> material preferably of n-type GaAs, with a first part 4 of the surface of one zone 1 shaped to form a concave reflector, and with a metal layer 6 of good reflectivity, heat-conductivity and electrical conductivity, the remaining surface part 5 forming the radiation exit surface and provided with a reflection reducing coating. Layer 6 may be of Ag, Cu, Al or an alloy. Surface 4 may be part of a paraboloid (Figs. 1, 2 and 3, not shown); an ellipsoid optionally with P-N junction 3 in the vicinity of focal point F, Fig. 5 (and Fig. 4, not shown); or a sphere with the P-N junction between the sphere centre and the reflector surface (Figs. 6 and 7, not shown). Exit surface 5 may be plane or curved to at least partially focus the radiation, e.g. in Fig. 5 the spherical exit surface is confocal to focal point F 2 and in Fig. 3 the convex exit surface radius of curvature is less than the distance from focal point F to the exit surface. In Fig. 6 (not shown), zone 2 of the P-N diode is at the centre of the flat exit surface. Axial drilling along the axis A from either direction may be effected by electron, ion or laser beams, or gas or liquid jets while zone 2 may be produced by alloying, diffusion, or focused ion beam bombardment. Surface 4 may be polished before layer 6 is provided. The diode electrodes are contacted via terminal E 1 to coating 6 and terminal E 2 to zone 2 by a wire alloyed or in pressure contact with zone 2.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0106907 | 1966-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1195547A true GB1195547A (en) | 1970-06-17 |
Family
ID=7527729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5068667A Expired GB1195547A (en) | 1966-11-09 | 1967-11-08 | Improvements in or relating to Luminescent Diodes |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT274914B (en) |
| CH (1) | CH474201A (en) |
| DE (1) | DE1539564A1 (en) |
| GB (1) | GB1195547A (en) |
| NL (1) | NL6710636A (en) |
| SE (1) | SE342383B (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942290A (en) * | 1972-03-03 | 1974-04-20 | ||
| JPS49149679U (en) * | 1973-04-27 | 1974-12-25 | ||
| JPS504990A (en) * | 1973-05-16 | 1975-01-20 | ||
| JPS5133171Y1 (en) * | 1970-12-26 | 1976-08-17 | ||
| JPS5372483U (en) * | 1977-10-20 | 1978-06-17 | ||
| US5175783A (en) * | 1990-04-03 | 1992-12-29 | Sumitomo Electric Industries, Ltd. | Optical molded device including two lenses and active element integrally |
| EP1427027A1 (en) * | 2001-08-13 | 2004-06-09 | Josuke Nakata | Semiconductor device and method of its manufacture |
| WO2005048362A1 (en) * | 2003-11-04 | 2005-05-26 | 3M Innovative Properties Company | Side reflector for illumination using light emitting diode |
| EP1744375A1 (en) * | 2005-07-14 | 2007-01-17 | Osram Opto Semiconductors GmbH | Optoelectronic chip and process for its manufacture |
| US7214557B2 (en) | 2003-10-24 | 2007-05-08 | Kyosemi Corporation | Light receiving or light emitting modular sheet and process for producing the same |
| US7220997B2 (en) | 2002-06-21 | 2007-05-22 | Josuke Nakata | Light receiving or light emitting device and itsd production method |
| US7238966B2 (en) | 2002-05-02 | 2007-07-03 | Josuke Nakata | Light-receiving panel or light-emitting panel, and manufacturing method thereof |
| US7244998B2 (en) | 2001-08-13 | 2007-07-17 | Josuke Nakata | Light-emitting or light-receiving semiconductor module and method of its manufacture |
| US7378757B2 (en) | 2003-06-09 | 2008-05-27 | Kyosemi Corporation | Power generation system |
| US7387400B2 (en) | 2003-04-21 | 2008-06-17 | Kyosemi Corporation | Light-emitting device with spherical photoelectric converting element |
| US7602035B2 (en) | 2001-10-19 | 2009-10-13 | Josuke Nakata | Light emitting or light receiving semiconductor module and method for manufacturing same |
| EP3297044A1 (en) * | 2016-09-19 | 2018-03-21 | Nick Shepherd | Improved led emitter, led emitter array and method for manufacturing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698730A (en) * | 1986-08-01 | 1987-10-06 | Stanley Electric Co., Ltd. | Light-emitting diode |
| DE19924316B4 (en) * | 1999-05-27 | 2010-10-07 | Zumtobel Lighting Gmbh | emitting diode |
-
1966
- 1966-11-09 DE DE19661539564 patent/DE1539564A1/en active Pending
-
1967
- 1967-08-01 NL NL6710636A patent/NL6710636A/xx unknown
- 1967-11-07 AT AT1001367A patent/AT274914B/en active
- 1967-11-07 CH CH1562067A patent/CH474201A/en not_active IP Right Cessation
- 1967-11-08 GB GB5068667A patent/GB1195547A/en not_active Expired
- 1967-11-08 SE SE1534367A patent/SE342383B/xx unknown
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133171Y1 (en) * | 1970-12-26 | 1976-08-17 | ||
| JPS4942290A (en) * | 1972-03-03 | 1974-04-20 | ||
| JPS49149679U (en) * | 1973-04-27 | 1974-12-25 | ||
| JPS504990A (en) * | 1973-05-16 | 1975-01-20 | ||
| JPS5418906B2 (en) * | 1973-05-16 | 1979-07-11 | ||
| JPS5372483U (en) * | 1977-10-20 | 1978-06-17 | ||
| JPS54774Y2 (en) * | 1977-10-20 | 1979-01-16 | ||
| US5175783A (en) * | 1990-04-03 | 1992-12-29 | Sumitomo Electric Industries, Ltd. | Optical molded device including two lenses and active element integrally |
| EP1427027A4 (en) * | 2001-08-13 | 2006-12-20 | Josuke Nakata | Semiconductor device and method of its manufacture |
| EP1427027A1 (en) * | 2001-08-13 | 2004-06-09 | Josuke Nakata | Semiconductor device and method of its manufacture |
| US7244998B2 (en) | 2001-08-13 | 2007-07-17 | Josuke Nakata | Light-emitting or light-receiving semiconductor module and method of its manufacture |
| US7238968B2 (en) | 2001-08-13 | 2007-07-03 | Josuke Nakata | Semiconductor device and method of making the same |
| US7602035B2 (en) | 2001-10-19 | 2009-10-13 | Josuke Nakata | Light emitting or light receiving semiconductor module and method for manufacturing same |
| US7238966B2 (en) | 2002-05-02 | 2007-07-03 | Josuke Nakata | Light-receiving panel or light-emitting panel, and manufacturing method thereof |
| US7220997B2 (en) | 2002-06-21 | 2007-05-22 | Josuke Nakata | Light receiving or light emitting device and itsd production method |
| US7387400B2 (en) | 2003-04-21 | 2008-06-17 | Kyosemi Corporation | Light-emitting device with spherical photoelectric converting element |
| US7378757B2 (en) | 2003-06-09 | 2008-05-27 | Kyosemi Corporation | Power generation system |
| US7214557B2 (en) | 2003-10-24 | 2007-05-08 | Kyosemi Corporation | Light receiving or light emitting modular sheet and process for producing the same |
| WO2005048362A1 (en) * | 2003-11-04 | 2005-05-26 | 3M Innovative Properties Company | Side reflector for illumination using light emitting diode |
| EP1744375A1 (en) * | 2005-07-14 | 2007-01-17 | Osram Opto Semiconductors GmbH | Optoelectronic chip and process for its manufacture |
| US7663150B2 (en) | 2005-07-14 | 2010-02-16 | Osram Opto Semiconductors Gmbh | Optoelectronic chip |
| EP3297044A1 (en) * | 2016-09-19 | 2018-03-21 | Nick Shepherd | Improved led emitter, led emitter array and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6710636A (en) | 1968-05-10 |
| CH474201A (en) | 1969-06-15 |
| DE1539564A1 (en) | 1969-12-11 |
| SE342383B (en) | 1972-01-31 |
| AT274914B (en) | 1969-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |