AT274914B - A <III> B <V> luminescent diode - Google Patents

A <III> B <V> luminescent diode

Info

Publication number
AT274914B
AT274914B AT1001367A AT1001367A AT274914B AT 274914 B AT274914 B AT 274914B AT 1001367 A AT1001367 A AT 1001367A AT 1001367 A AT1001367 A AT 1001367A AT 274914 B AT274914 B AT 274914B
Authority
AT
Austria
Prior art keywords
iii
luminescent diode
luminescent
diode
Prior art date
Application number
AT1001367A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT274914B publication Critical patent/AT274914B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
AT1001367A 1966-11-09 1967-11-07 A <III> B <V> luminescent diode AT274914B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106907 1966-11-09

Publications (1)

Publication Number Publication Date
AT274914B true AT274914B (en) 1969-10-10

Family

ID=7527729

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1001367A AT274914B (en) 1966-11-09 1967-11-07 A <III> B <V> luminescent diode

Country Status (6)

Country Link
AT (1) AT274914B (en)
CH (1) CH474201A (en)
DE (1) DE1539564A1 (en)
GB (1) GB1195547A (en)
NL (1) NL6710636A (en)
SE (1) SE342383B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133171Y1 (en) * 1970-12-26 1976-08-17
JPS4942290A (en) * 1972-03-03 1974-04-20
JPS49149679U (en) * 1973-04-27 1974-12-25
JPS5418906B2 (en) * 1973-05-16 1979-07-11
JPS54774Y2 (en) * 1977-10-20 1979-01-16
US4698730A (en) * 1986-08-01 1987-10-06 Stanley Electric Co., Ltd. Light-emitting diode
DE69129817T2 (en) * 1990-04-03 1999-01-07 Sumitomo Electric Industries, Ltd., Osaka Optical device
DE19924316B4 (en) * 1999-05-27 2010-10-07 Zumtobel Lighting Gmbh emitting diode
CA2456671C (en) 2001-08-13 2009-09-22 Josuke Nakata Light emitting or light receiving semiconductor module and making method thereof
US7238968B2 (en) 2001-08-13 2007-07-03 Josuke Nakata Semiconductor device and method of making the same
WO2003036731A1 (en) 2001-10-19 2003-05-01 Josuke Nakata Light emitting or light receiving semiconductor module and method for manufacturing the same
KR100652916B1 (en) 2002-05-02 2006-12-01 죠스케 나카다 Light-receiving panel or light-emitting panel, and manufacturing method thereof
EP1553638B1 (en) 2002-06-21 2008-12-10 Kyosemi Corporation Light receiving or light emitting device and its production method
US7387400B2 (en) 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
AU2003242109A1 (en) 2003-06-09 2005-01-04 Kyosemi Corporation Generator system
US7214557B2 (en) 2003-10-24 2007-05-08 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
US7070301B2 (en) * 2003-11-04 2006-07-04 3M Innovative Properties Company Side reflector for illumination using light emitting diode
DE102005033005A1 (en) 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelectronic chip
EP3297044A1 (en) * 2016-09-19 2018-03-21 Nick Shepherd Improved led emitter, led emitter array and method for manufacturing the same

Also Published As

Publication number Publication date
NL6710636A (en) 1968-05-10
CH474201A (en) 1969-06-15
GB1195547A (en) 1970-06-17
DE1539564A1 (en) 1969-12-11
SE342383B (en) 1972-01-31

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