GB1193356A - Improvements in or relating to Voltage-Dependent Semiconductor Capacitors - Google Patents
Improvements in or relating to Voltage-Dependent Semiconductor CapacitorsInfo
- Publication number
- GB1193356A GB1193356A GB57490/67A GB5749067A GB1193356A GB 1193356 A GB1193356 A GB 1193356A GB 57490/67 A GB57490/67 A GB 57490/67A GB 5749067 A GB5749067 A GB 5749067A GB 1193356 A GB1193356 A GB 1193356A
- Authority
- GB
- United Kingdom
- Prior art keywords
- voltage
- relating
- dec
- zones
- semiconductor capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1564790A DE1564790C3 (de) | 1966-12-22 | 1966-12-22 | Spannungsabhängiger Halbleiterkondensator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1193356A true GB1193356A (en) | 1970-05-28 |
Family
ID=7528181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB57490/67A Expired GB1193356A (en) | 1966-12-22 | 1967-12-19 | Improvements in or relating to Voltage-Dependent Semiconductor Capacitors |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3506888A (https=) |
| AT (1) | AT274170B (https=) |
| CH (1) | CH474852A (https=) |
| DE (1) | DE1564790C3 (https=) |
| FR (1) | FR1562881A (https=) |
| GB (1) | GB1193356A (https=) |
| NL (1) | NL6710921A (https=) |
| SE (1) | SE318336B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611062A (en) * | 1968-04-17 | 1971-10-05 | Ibm | Passive elements for solid-state integrated circuits |
| GB1303351A (https=) * | 1970-02-19 | 1973-01-17 | ||
| US3962713A (en) * | 1972-06-02 | 1976-06-08 | Texas Instruments Incorporated | Large value capacitor |
| US4638344A (en) * | 1979-10-09 | 1987-01-20 | Cardwell Jr Walter T | Junction field-effect transistor controlled by merged depletion regions |
| US4698653A (en) * | 1979-10-09 | 1987-10-06 | Cardwell Jr Walter T | Semiconductor devices controlled by depletion regions |
| US5338966A (en) * | 1989-09-21 | 1994-08-16 | Toko Kabushiki Kaisha | Variable capacitance diode device |
| WO1995031010A1 (fr) * | 1994-05-10 | 1995-11-16 | Valery Moiseevich Ioffe | Diode varicap |
| GB9416900D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | A variable capacitance semiconductor diode |
| RU2119698C1 (ru) * | 1995-11-15 | 1998-09-27 | Валерий Моисеевич Иоффе | Варикап |
| US20090096548A1 (en) * | 2007-10-12 | 2009-04-16 | Hopper Peter J | Tuning and compensation technique for semiconductor bulk resonators |
| US9484471B2 (en) * | 2014-09-12 | 2016-11-01 | Qorvo Us, Inc. | Compound varactor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3025438A (en) * | 1959-09-18 | 1962-03-13 | Tungsol Electric Inc | Field effect transistor |
| US3252003A (en) * | 1962-09-10 | 1966-05-17 | Westinghouse Electric Corp | Unipolar transistor |
| BE643783A (fr) * | 1963-02-19 | 1964-05-29 | Forges Et Ateliers De Constructions Electriques De Jeumont | Dispositif de commutation de puissance à semi-conducteur |
-
1966
- 1966-12-22 DE DE1564790A patent/DE1564790C3/de not_active Expired
-
1967
- 1967-08-08 NL NL6710921A patent/NL6710921A/xx unknown
- 1967-11-16 US US683516A patent/US3506888A/en not_active Expired - Lifetime
- 1967-12-19 GB GB57490/67A patent/GB1193356A/en not_active Expired
- 1967-12-19 FR FR1562881D patent/FR1562881A/fr not_active Expired
- 1967-12-20 AT AT1152967A patent/AT274170B/de active
- 1967-12-20 CH CH1798767A patent/CH474852A/de not_active IP Right Cessation
- 1967-12-21 SE SE17633/67A patent/SE318336B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1564790A1 (de) | 1970-01-08 |
| FR1562881A (https=) | 1969-04-11 |
| AT274170B (de) | 1969-09-10 |
| US3506888A (en) | 1970-04-14 |
| CH474852A (de) | 1969-06-30 |
| DE1564790B2 (de) | 1977-06-30 |
| NL6710921A (https=) | 1968-06-24 |
| DE1564790C3 (de) | 1978-03-09 |
| SE318336B (https=) | 1969-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1193356A (en) | Improvements in or relating to Voltage-Dependent Semiconductor Capacitors | |
| MY6900296A (en) | Capacitor | |
| JPS4859363A (https=) | ||
| AT274433B (de) | Schaltung zum Übertragen von Ladung eines ersten Kondensators in einen zweiten Kondensator, Einrichtung zur Verwendung dieser Schaltung und Halbleiterelement für eine derartige Einrichtung | |
| NL144764B (nl) | Werkwijze voor het vervaardigen van voorwerpen met twee op geringe afstand van elkaar gelegen elektrisch geleidende lagen, alsmede voorwerpen, vervaardigd volgens deze werkwijze. | |
| GB1535615A (en) | Semiconductor devices | |
| GB1411795A (en) | Storage elements | |
| AT267707B (de) | Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität | |
| ES379433A1 (es) | Un dispositivo semiconductor integrado. | |
| AT263941B (de) | Halbleiterbauelement mit mindestens einem Druckkontaktübergang | |
| GB886637A (en) | Improvements in or relating to voltage-dependent capacitors | |
| CH489905A (de) | Halbleiterbauelement mit mindestens zwei an die Oberfläche tretenden Zonen unterschiedlichen Leitfähigkeitstyps | |
| CH479967A (de) | Aus Schichten bestehender elektrischer Supraleiter | |
| GB1197969A (en) | Improvements in or relating to Voltage-Dependent Semiconductor Capacitors | |
| NL163371C (nl) | Geintegreerde halfgeleiderschakeling voorzien van een bestuurbaar halfgeleidergelijkrichterelement met vier opeenvolgende gebieden van afwisselend verschillend geleidingstype. | |
| ES383504A1 (es) | Una disposicion de circuito integrado de semiconductores. | |
| CH397876A (de) | Halbleiterzelle mit einer gekapselten Halbleiteranordnung mit vier Schichten von abwechselnd gegensätzlichem Leitfähigkeitstyp und Verfahren zu ihrer Herstellung | |
| CH365143A (de) | Halbleiteranordnung mit vier Schichten von abwechselnd gegensätzlichem Leitfähigkeitstyp | |
| DK123676B (da) | Fremgangsmåde til fremstilling af elektriske kondensatorer med halvlederlag. | |
| JPS52107786A (en) | Integrating circuit | |
| FR1515483A (fr) | Condensateur rotatif, en particulier du type à couches isolantes ?odes | |
| AT266217B (de) | Halbleiteranordnung mit mindestens zwei Zonen unterschiedlicher Beschaffenheit | |
| SU107467A1 (ru) | Термоэлектрическа батаре | |
| Galavanov et al. | The capacitive properties of alloyed p-n junctions of a p-type InSb base(Capacitance of alloyed p-n junctions in p-type InSb is inversely proportional to square root of bias voltage) | |
| CH441511A (de) | Halbleiterelement mit mindestens drei pn-Übergängen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |