GB1191172A - Process for Etch-Polishing Sapphire and other Refractory Inorganic Oxides - Google Patents

Process for Etch-Polishing Sapphire and other Refractory Inorganic Oxides

Info

Publication number
GB1191172A
GB1191172A GB26820/67A GB2682067A GB1191172A GB 1191172 A GB1191172 A GB 1191172A GB 26820/67 A GB26820/67 A GB 26820/67A GB 2682067 A GB2682067 A GB 2682067A GB 1191172 A GB1191172 A GB 1191172A
Authority
GB
United Kingdom
Prior art keywords
etch
polished
oxide
channel
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26820/67A
Inventor
Harold Murray Manasevit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of GB1191172A publication Critical patent/GB1191172A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

1,191,172. Etching. NORTH AMERICAN ROCKWELL CORP. 9 June, 1967 [13 June, 1966], No. 26820/67. Heading B6J. The surfaces of refractory inorganic oxide materials are etch-polished by exposing the material to a gaseous sulphur fluoride at temperatures between 1150‹ and 1600‹ C. Specified oxides are sapphire (aluminium oxide), beryllium oxide, thorium oxide, zirconium oxide, spinels and chrysoberyl; the temperature of the process is preferably between 1300‹ and 1600‹ C.; and the gaseous etchant is preferably sulphur tetra- or hexa-fluoride in a diluent which may be hydrogen, helium, argon or nitrogen. The material etch-polished may be the sides and ends of ruby laser rods. Apparatus (Fig. 1).-The refractory material 1 to be etch-polished is placed inside a reactor 2 on a pedestal 3 and separated therefrom by a spacer 4; a preferred pedestal is made of carbon, silicon or molybdenum which is inductively heated by coil 5; the spacer 4 is preferably of a material similar to that being etch-polished, e.g. alumina. The etchant gas source 7 and the carrier gas source 10 are connected through valves 8, 11 and flow meters 9, 12 to channel 6 and the reactor, before being exhausted through channel 13. Channel 14 and valve 15 allow the introduction of semi-conductor deposition materials subsequent to the etch-polishing.
GB26820/67A 1966-06-13 1967-06-09 Process for Etch-Polishing Sapphire and other Refractory Inorganic Oxides Expired GB1191172A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55697766A 1966-06-13 1966-06-13

Publications (1)

Publication Number Publication Date
GB1191172A true GB1191172A (en) 1970-05-06

Family

ID=24223575

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26820/67A Expired GB1191172A (en) 1966-06-13 1967-06-09 Process for Etch-Polishing Sapphire and other Refractory Inorganic Oxides

Country Status (5)

Country Link
US (1) US3546036A (en)
BE (1) BE697181A (en)
DE (1) DE1646804B2 (en)
GB (1) GB1191172A (en)
NL (1) NL6706449A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1382716A2 (en) * 2002-07-18 2004-01-21 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (en) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of high-purity monocrystalline layers consisting of silicon
US3971684A (en) * 1973-12-03 1976-07-27 Hewlett-Packard Company Etching thin film circuits and semiconductor chips
US4033743A (en) * 1974-03-22 1977-07-05 General Electric Company Chemically polished polycrystalline alumina material
US4038117A (en) * 1975-09-04 1977-07-26 Ilc Technology, Inc. Process for gas polishing sapphire and the like
US4011099A (en) * 1975-11-07 1977-03-08 Monsanto Company Preparation of damage-free surface on alpha-alumina
US4052251A (en) * 1976-03-02 1977-10-04 Rca Corporation Method of etching sapphire utilizing sulfur hexafluoride
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
US4826300A (en) * 1987-07-30 1989-05-02 Hughes Aircraft Company Silicon-on-sapphire liquid crystal light valve and method
US20070188717A1 (en) * 2006-02-14 2007-08-16 Melcher Charles L Method for producing crystal elements having strategically oriented faces for enhancing performance

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238105B (en) * 1963-07-17 1967-04-06 Siemens Ag Process for the production of pn junctions in silicon
USB389017I5 (en) * 1964-08-12

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1382716A2 (en) * 2002-07-18 2004-01-21 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
EP1382716A3 (en) * 2002-07-18 2004-07-07 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Also Published As

Publication number Publication date
BE697181A (en) 1967-10-02
DE1646804A1 (en) 1971-09-02
DE1646804B2 (en) 1972-03-02
US3546036A (en) 1970-12-08
NL6706449A (en) 1967-12-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees