GB1187564A - Gunn Effect Devices - Google Patents
Gunn Effect DevicesInfo
- Publication number
- GB1187564A GB1187564A GB59215/69A GB5921569A GB1187564A GB 1187564 A GB1187564 A GB 1187564A GB 59215/69 A GB59215/69 A GB 59215/69A GB 5921569 A GB5921569 A GB 5921569A GB 1187564 A GB1187564 A GB 1187564A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- electrode
- anode
- gunn effect
- domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/103—Gunn-effect devices controlled by electromagnetic radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
1,187,564. Semi-conductor oscillators. NATIONAL RESEARCH DEVELOPMENT CORP. 21 March, 1967 [8 Feb., 1966], No. 59215/69. Divided out of 1,187,563. Heading H3T. [Also in Division H1] A Gunn effect oscillator comprises a third electrode on the material between the anode and cathode and a circuit between the third electrode and the cathode which produces Gunn effect oscillations at a frequency independent of the cathode-anode distance. In one arrangement (Fig. 4) the third electrode F is capacitively connected to the cathode K so that as a domain D reaches F, the resulting signal transmitted back to K results in the formation of another domain. In another arrangement a constant voltage supply is connected between F and K and a constantcurrent supply between F and anode A.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB59215/69A GB1187564A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
GB5434/66A GB1187563A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB59215/69A GB1187564A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
GB5434/66A GB1187563A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1187564A true GB1187564A (en) | 1970-04-08 |
Family
ID=26239884
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5434/66A Expired GB1187563A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
GB59215/69A Expired GB1187564A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5434/66A Expired GB1187563A (en) | 1966-02-08 | 1966-02-08 | Gunn Effect Devices |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB1187563A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018121672A1 (en) * | 2018-09-05 | 2020-03-05 | Technische Universität Darmstadt | Gun diode and method for generating terahertz radiation |
-
1966
- 1966-02-08 GB GB5434/66A patent/GB1187563A/en not_active Expired
- 1966-02-08 GB GB59215/69A patent/GB1187564A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1187563A (en) | 1970-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES406623A1 (en) | High voltage regulator | |
GB1247199A (en) | Improvements relating to microwave generators | |
GB1121439A (en) | Electronic tunable oscillator circuit | |
GB1170984A (en) | Circuit for Generating Current Fluctuations at Microwave Frequencies. | |
GB974493A (en) | Improvements in semiconductor diodes, circuits therefor and methods of making them | |
GB1326810A (en) | Voltage and current regulated power supply circuit for gaseous discharge lamp | |
GB1187564A (en) | Gunn Effect Devices | |
GB1344014A (en) | Self-compensated low voltage amplifier | |
JPS57181232A (en) | Voltage-controlled oscillator circuit | |
GB1521109A (en) | Logic grates | |
GB1088968A (en) | Crystal controlled oscillator | |
GB1292560A (en) | Controllable reactance circuit | |
GB1170268A (en) | Semiconductor Bulk Oscillators. | |
GB621206A (en) | Improvements in electrical oscillators | |
GB1022308A (en) | Crystal oscillator circuit | |
GB1057916A (en) | Switching circuits employing surface potential controlled semiconductor devices | |
GB1093164A (en) | Improvements in or relating to electric oscillators | |
GB1144459A (en) | Crystal-controlled radio frequency generators | |
GB1026894A (en) | Improvements in or relating to astable multivibrator circuit arrangements | |
GB1392876A (en) | Method and device for generating electrical oscillations | |
GB868995A (en) | Improvements in and relating to frequency-changing circuits | |
GB1334287A (en) | Oscillator circuit | |
GB1099848A (en) | Improvements in or relating to electrical circuit arrangements for performing invert operations | |
GB815911A (en) | Improvements in or relating to oscillator circuits incorporating junction transistors | |
GB1141048A (en) | Improvements in inhibit circuits |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |