GB1182864A - Improvements in or relating to Voltage-Controlled Capacitor Arrangements. - Google Patents

Improvements in or relating to Voltage-Controlled Capacitor Arrangements.

Info

Publication number
GB1182864A
GB1182864A GB3857868A GB3857868A GB1182864A GB 1182864 A GB1182864 A GB 1182864A GB 3857868 A GB3857868 A GB 3857868A GB 3857868 A GB3857868 A GB 3857868A GB 1182864 A GB1182864 A GB 1182864A
Authority
GB
United Kingdom
Prior art keywords
junctions
voltage
capacitances
tuning
controlled capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3857868A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1182864A publication Critical patent/GB1182864A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/28—Continuous tuning of more than one resonant circuit simultaneously, the tuning frequencies of the circuits having a substantially constant difference throughout the tuning range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G5/00—Tone control or bandwidth control in amplifiers
    • H03G5/16—Automatic control
    • H03G5/24—Automatic control in frequency-selective amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

1,182,864. Radio receiving apparatus. SIEMENS A.G. 13 Aug., 1968 [14 Aug., 1967], No. 38578/68. Heading H3Q. [Also in Division H1] A voltage-controlled capacitor arrangement comprises at least two PN junctions forming controllable capacitances in a single semiconductor body. As shown, two regions 2, 3 of one conductivity type are provided in a semiconductor body 1 of the other conductivity type, the two junctions having different areas, and the whole arrangement is potted in synthetic material 9. The two diodes so formed may serve as tuning capacitances for the input and local oscillator circuits of a medium waveband tuner for a radio receiver, and further junctions may be provided in the same body 1 to serve as tuning capacitances for the intermediate frequency circuit of the tuner and for the tuning circuits of other wavebands, e.g. the U.H.F. band. An arrangement according to the invention may also be used to control the bandwidth of an intermediate frequency filter.
GB3857868A 1967-08-14 1968-08-13 Improvements in or relating to Voltage-Controlled Capacitor Arrangements. Expired GB1182864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0111346 1967-08-14

Publications (1)

Publication Number Publication Date
GB1182864A true GB1182864A (en) 1970-03-04

Family

ID=7530879

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3857868A Expired GB1182864A (en) 1967-08-14 1968-08-13 Improvements in or relating to Voltage-Controlled Capacitor Arrangements.

Country Status (6)

Country Link
AT (1) AT301712B (en)
CH (1) CH483122A (en)
DE (1) DE1614581A1 (en)
FR (1) FR1581807A (en)
GB (1) GB1182864A (en)
NL (1) NL6809831A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069687A1 (en) * 2000-03-16 2001-09-20 Infineon Technologies Ag Electronic component comprising variable capacitance diodes, use of said component in a receiving unit and a circuit arrangement comprising said component

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2199198B1 (en) * 1972-09-08 1977-12-30 Korovin Stanisl V
FR2214971B1 (en) * 1973-01-19 1976-08-27 Akimov Jury
JPS5642381A (en) * 1979-09-14 1981-04-20 Toko Inc Variable capacity diode device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069687A1 (en) * 2000-03-16 2001-09-20 Infineon Technologies Ag Electronic component comprising variable capacitance diodes, use of said component in a receiving unit and a circuit arrangement comprising said component
US6842094B2 (en) 2000-03-16 2005-01-11 Infineon Technologies Ag Electronic component containing capacitance diodes, having different capacitance ranges, and circuit configuration containing the component

Also Published As

Publication number Publication date
NL6809831A (en) 1969-02-18
DE1614581A1 (en) 1970-10-29
FR1581807A (en) 1969-09-19
AT301712B (en) 1972-09-11
CH483122A (en) 1969-12-15

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee