GB1182864A - Improvements in or relating to Voltage-Controlled Capacitor Arrangements. - Google Patents
Improvements in or relating to Voltage-Controlled Capacitor Arrangements.Info
- Publication number
- GB1182864A GB1182864A GB3857868A GB3857868A GB1182864A GB 1182864 A GB1182864 A GB 1182864A GB 3857868 A GB3857868 A GB 3857868A GB 3857868 A GB3857868 A GB 3857868A GB 1182864 A GB1182864 A GB 1182864A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junctions
- voltage
- capacitances
- tuning
- controlled capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229920002994 synthetic fiber Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/28—Continuous tuning of more than one resonant circuit simultaneously, the tuning frequencies of the circuits having a substantially constant difference throughout the tuning range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G5/00—Tone control or bandwidth control in amplifiers
- H03G5/16—Automatic control
- H03G5/24—Automatic control in frequency-selective amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/02—Details
- H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
- H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
- H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
1,182,864. Radio receiving apparatus. SIEMENS A.G. 13 Aug., 1968 [14 Aug., 1967], No. 38578/68. Heading H3Q. [Also in Division H1] A voltage-controlled capacitor arrangement comprises at least two PN junctions forming controllable capacitances in a single semiconductor body. As shown, two regions 2, 3 of one conductivity type are provided in a semiconductor body 1 of the other conductivity type, the two junctions having different areas, and the whole arrangement is potted in synthetic material 9. The two diodes so formed may serve as tuning capacitances for the input and local oscillator circuits of a medium waveband tuner for a radio receiver, and further junctions may be provided in the same body 1 to serve as tuning capacitances for the intermediate frequency circuit of the tuner and for the tuning circuits of other wavebands, e.g. the U.H.F. band. An arrangement according to the invention may also be used to control the bandwidth of an intermediate frequency filter.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0111346 | 1967-08-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1182864A true GB1182864A (en) | 1970-03-04 |
Family
ID=7530879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3857868A Expired GB1182864A (en) | 1967-08-14 | 1968-08-13 | Improvements in or relating to Voltage-Controlled Capacitor Arrangements. |
Country Status (6)
Country | Link |
---|---|
AT (1) | AT301712B (en) |
CH (1) | CH483122A (en) |
DE (1) | DE1614581A1 (en) |
FR (1) | FR1581807A (en) |
GB (1) | GB1182864A (en) |
NL (1) | NL6809831A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001069687A1 (en) * | 2000-03-16 | 2001-09-20 | Infineon Technologies Ag | Electronic component comprising variable capacitance diodes, use of said component in a receiving unit and a circuit arrangement comprising said component |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2199198B1 (en) * | 1972-09-08 | 1977-12-30 | Korovin Stanisl V | |
FR2214971B1 (en) * | 1973-01-19 | 1976-08-27 | Akimov Jury | |
JPS5642381A (en) * | 1979-09-14 | 1981-04-20 | Toko Inc | Variable capacity diode device |
-
1967
- 1967-08-14 DE DE19671614581 patent/DE1614581A1/en active Pending
-
1968
- 1968-07-11 NL NL6809831A patent/NL6809831A/xx unknown
- 1968-08-08 FR FR1581807D patent/FR1581807A/fr not_active Expired
- 1968-08-12 AT AT788068A patent/AT301712B/en not_active IP Right Cessation
- 1968-08-12 CH CH1210368A patent/CH483122A/en not_active IP Right Cessation
- 1968-08-13 GB GB3857868A patent/GB1182864A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001069687A1 (en) * | 2000-03-16 | 2001-09-20 | Infineon Technologies Ag | Electronic component comprising variable capacitance diodes, use of said component in a receiving unit and a circuit arrangement comprising said component |
US6842094B2 (en) | 2000-03-16 | 2005-01-11 | Infineon Technologies Ag | Electronic component containing capacitance diodes, having different capacitance ranges, and circuit configuration containing the component |
Also Published As
Publication number | Publication date |
---|---|
NL6809831A (en) | 1969-02-18 |
FR1581807A (en) | 1969-09-19 |
CH483122A (en) | 1969-12-15 |
AT301712B (en) | 1972-09-11 |
DE1614581A1 (en) | 1970-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |