GB1172337A - Improvements in or relating to Semi-Conductor Devices - Google Patents

Improvements in or relating to Semi-Conductor Devices

Info

Publication number
GB1172337A
GB1172337A GB36375/68A GB3637568A GB1172337A GB 1172337 A GB1172337 A GB 1172337A GB 36375/68 A GB36375/68 A GB 36375/68A GB 3637568 A GB3637568 A GB 3637568A GB 1172337 A GB1172337 A GB 1172337A
Authority
GB
United Kingdom
Prior art keywords
aperture
semi
conductor devices
conductor
drift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36375/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671591725 external-priority patent/DE1591725C/en
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1172337A publication Critical patent/GB1172337A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

1,172,337. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGSG.m.b.H. 30 July, 1968 [29 Sept., 1967], No. 36375/68. Heading H1K. A controllable Gunn effect device comprises a semi-conductor body 9 having at least one aperture 10 in it to allow control of the microwave oscillations produced by the device. The apertures in the body extend substantially at rightangles to the direction of drift of the charge carriers and means may be provided, such as electrode 11 on the aperture wall, or metal pin 14 in the aperture 13, or PN junction in aperture 16, for the connection of an external source of control voltage or energy to the opening. Both the material and the doping of the body may vary either continuously or in steps, the variation being in the direction of the carrier drift. The body is made of a Group III-V material. Applications of the device as an oscillator, amplifier, frequency converter, delay device or logic element are described.
GB36375/68A 1967-09-29 1968-07-30 Improvements in or relating to Semi-Conductor Devices Expired GB1172337A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19671591725 DE1591725C (en) 1967-09-29 1967-09-29 Microwave oscillator

Publications (1)

Publication Number Publication Date
GB1172337A true GB1172337A (en) 1969-11-26

Family

ID=5680190

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36375/68A Expired GB1172337A (en) 1967-09-29 1968-07-30 Improvements in or relating to Semi-Conductor Devices

Country Status (5)

Country Link
JP (1) JPS507428B1 (en)
CH (1) CH506917A (en)
FR (1) FR1588953A (en)
GB (1) GB1172337A (en)
SE (1) SE330456B (en)

Also Published As

Publication number Publication date
JPS507428B1 (en) 1975-03-25
DE1591725A1 (en) 1972-03-09
CH506917A (en) 1971-04-30
SE330456B (en) 1970-11-16
DE1591725B2 (en) 1972-12-28
FR1588953A (en) 1970-03-16

Similar Documents

Publication Publication Date Title
US2899646A (en) Tread
US2914665A (en) Semiconductor devices
GB1462935A (en) Circuit arrangement
US3743967A (en) Stabilized trapatt oscillator diode
GB1172337A (en) Improvements in or relating to Semi-Conductor Devices
US2913676A (en) Semiconductor devices and systems
US3621306A (en) Controlled gunn-effect device
US3488527A (en) Punch-through,microwave negativeresistance device
US3451011A (en) Two-valley semiconductor devices and circuits
US4291320A (en) Heterojunction IMPATT diode
GB1232837A (en)
US3090014A (en) Negative resistance device modulator
GB1292560A (en) Controllable reactance circuit
GB1114646A (en) Improvements in or relating to a frequency multiplier
US3091703A (en) Semiconductor devices utilizing carrier injection into a space charge region
GB1189354A (en) Microwave Semiconductor Device
GB1513757A (en) Cathode for gunn diode
GB1170607A (en) Improvements in or relating to Gunn Effect Semi-Conductor Arrangements
GB1228383A (en)
Matthei et al. New gallium-arsenide IMPATT diode results(GaAs IMPATT diodes technology and performance at C, X and K band frequencies)
GB1092448A (en) Solid state voltage tunable oscillator
DALMAN et al. Advanced concepts of microwave generation and control in solids(Research and development on microwave oscillators, diode structures, and ion implantation and diffusion)[Quarterly Interim Report, 1 Oct.- 31 Dec. 1972]
HADDAD Microwave solid-state device and circuit studies(Solid state physics in microwave generation, microwave amplification, and semiconductors)[Quarterly Report, 1 Sep.- Dec. 1971]
GB1111187A (en) Improvements in or relating to gunn effect amplifiers
GB1110338A (en) Epitaxial bulk semiconductor oscillator

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees