GB1111187A - Improvements in or relating to gunn effect amplifiers - Google Patents

Improvements in or relating to gunn effect amplifiers

Info

Publication number
GB1111187A
GB1111187A GB49218/66A GB4921866A GB1111187A GB 1111187 A GB1111187 A GB 1111187A GB 49218/66 A GB49218/66 A GB 49218/66A GB 4921866 A GB4921866 A GB 4921866A GB 1111187 A GB1111187 A GB 1111187A
Authority
GB
United Kingdom
Prior art keywords
gunn effect
resonator
relating
amplifiers
nov
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49218/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1111187A publication Critical patent/GB1111187A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

1,111,187. Gunn effect amplifiers. TELEFUNKEN PATENTVERWERTUNGSG.m.b.H. 2 Nov., 1966 [26, Nov., 1965], No. 49218/66. Heading H3T. [Also in Division H1] In a Gunn effect amplifier the Gunn effect element is coupled to a waveguide resonator in such a manner that the E vector of the high frequency waves in the resonator is substantially parallel to the drift velocity of the charge carriers in the element. The element is preferably made of III-V semi-conductor material and mounted on, or in an opening in, the wall of the resonator.
GB49218/66A 1965-11-26 1966-11-02 Improvements in or relating to gunn effect amplifiers Expired GB1111187A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0029869 1965-11-26

Publications (1)

Publication Number Publication Date
GB1111187A true GB1111187A (en) 1968-04-24

Family

ID=7555197

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49218/66A Expired GB1111187A (en) 1965-11-26 1966-11-02 Improvements in or relating to gunn effect amplifiers

Country Status (1)

Country Link
GB (1) GB1111187A (en)

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