GB1166659A - A method of Forming Metallic Patterns on Substrate Bodies - Google Patents
A method of Forming Metallic Patterns on Substrate BodiesInfo
- Publication number
- GB1166659A GB1166659A GB50643/66A GB5064366A GB1166659A GB 1166659 A GB1166659 A GB 1166659A GB 50643/66 A GB50643/66 A GB 50643/66A GB 5064366 A GB5064366 A GB 5064366A GB 1166659 A GB1166659 A GB 1166659A
- Authority
- GB
- United Kingdom
- Prior art keywords
- platinum
- layer
- titanium
- oxide
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 16
- 229910052697 platinum Inorganic materials 0.000 abstract 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 5
- 239000010931 gold Substances 0.000 abstract 5
- 229910052737 gold Inorganic materials 0.000 abstract 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 229910052719 titanium Inorganic materials 0.000 abstract 3
- 239000010936 titanium Substances 0.000 abstract 3
- 238000004070 electrodeposition Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Die Bonding (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US512045A US3388048A (en) | 1965-12-07 | 1965-12-07 | Fabrication of beam lead semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1166659A true GB1166659A (en) | 1969-10-08 |
Family
ID=24037447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB50643/66A Expired GB1166659A (en) | 1965-12-07 | 1966-11-11 | A method of Forming Metallic Patterns on Substrate Bodies |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3388048A (en:Method) |
| AT (1) | AT266219B (en:Method) |
| BE (1) | BE690534A (en:Method) |
| CH (1) | CH455945A (en:Method) |
| DE (1) | DE1589076C3 (en:Method) |
| ES (1) | ES334684A1 (en:Method) |
| FR (1) | FR1504176A (en:Method) |
| GB (1) | GB1166659A (en:Method) |
| IL (1) | IL26908A (en:Method) |
| NL (1) | NL6617128A (en:Method) |
| SE (1) | SE325336B (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991014288A1 (en) * | 1990-03-07 | 1991-09-19 | Santa Barbara Research Center | Magnetoresistor structure and operating method |
| CN111945128A (zh) * | 2020-08-18 | 2020-11-17 | 江苏能华微电子科技发展有限公司 | 一种提高铂与衬底黏附性的方法及其产品 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506887A (en) * | 1966-02-23 | 1970-04-14 | Motorola Inc | Semiconductor device and method of making same |
| GB1175667A (en) * | 1966-04-07 | 1969-12-23 | Associated Semiconductor Mft | Improvements in the Electrodeposition of Metals using a Composite Mask |
| US3537175A (en) * | 1966-11-09 | 1970-11-03 | Advalloy Inc | Lead frame for semiconductor devices and method for making same |
| US3507756A (en) * | 1967-08-04 | 1970-04-21 | Bell Telephone Labor Inc | Method of fabricating semiconductor device contact |
| US3658489A (en) * | 1968-08-09 | 1972-04-25 | Nippon Electric Co | Laminated electrode for a semiconductor device |
| US3620932A (en) * | 1969-05-05 | 1971-11-16 | Trw Semiconductors Inc | Beam leads and method of fabrication |
| US3708403A (en) * | 1971-09-01 | 1973-01-02 | L Terry | Self-aligning electroplating mask |
| US3926747A (en) * | 1974-02-19 | 1975-12-16 | Bell Telephone Labor Inc | Selective electrodeposition of gold on electronic devices |
| US4011144A (en) * | 1975-12-22 | 1977-03-08 | Western Electric Company | Methods of forming metallization patterns on beam lead semiconductor devices |
| US4988412A (en) * | 1988-12-27 | 1991-01-29 | General Electric Company | Selective electrolytic desposition on conductive and non-conductive substrates |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3287612A (en) * | 1963-12-17 | 1966-11-22 | Bell Telephone Labor Inc | Semiconductor contacts and protective coatings for planar devices |
| US3325379A (en) * | 1962-05-22 | 1967-06-13 | Hazeltine Research Inc | Method of making metallic patterns having continuous interconnections |
| NL134170C (en:Method) * | 1963-12-17 | 1900-01-01 | ||
| US3274670A (en) * | 1965-03-18 | 1966-09-27 | Bell Telephone Labor Inc | Semiconductor contact |
-
1965
- 1965-12-07 US US512045A patent/US3388048A/en not_active Expired - Lifetime
-
1966
- 1966-11-11 GB GB50643/66A patent/GB1166659A/en not_active Expired
- 1966-11-21 IL IL26908A patent/IL26908A/xx unknown
- 1966-12-01 BE BE690534D patent/BE690534A/xx not_active IP Right Cessation
- 1966-12-02 CH CH1724766A patent/CH455945A/de unknown
- 1966-12-02 DE DE1589076A patent/DE1589076C3/de not_active Expired
- 1966-12-05 AT AT1124066A patent/AT266219B/de active
- 1966-12-05 ES ES0334684A patent/ES334684A1/es not_active Expired
- 1966-12-06 SE SE16709/66A patent/SE325336B/xx unknown
- 1966-12-06 NL NL6617128A patent/NL6617128A/xx unknown
- 1966-12-07 FR FR86549A patent/FR1504176A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991014288A1 (en) * | 1990-03-07 | 1991-09-19 | Santa Barbara Research Center | Magnetoresistor structure and operating method |
| CN111945128A (zh) * | 2020-08-18 | 2020-11-17 | 江苏能华微电子科技发展有限公司 | 一种提高铂与衬底黏附性的方法及其产品 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1589076A1 (de) | 1970-03-19 |
| AT266219B (de) | 1968-11-11 |
| DE1589076C3 (de) | 1980-11-06 |
| CH455945A (de) | 1968-05-15 |
| ES334684A1 (es) | 1967-11-01 |
| SE325336B (en:Method) | 1970-06-29 |
| FR1504176A (fr) | 1967-12-01 |
| DE1589076B2 (de) | 1975-05-22 |
| BE690534A (en:Method) | 1967-05-16 |
| US3388048A (en) | 1968-06-11 |
| IL26908A (en) | 1970-11-30 |
| NL6617128A (en:Method) | 1967-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3025589A (en) | Method of manufacturing semiconductor devices | |
| US3225261A (en) | High frequency power transistor | |
| GB1166659A (en) | A method of Forming Metallic Patterns on Substrate Bodies | |
| GB1070278A (en) | Method of producing a semiconductor integrated circuit element | |
| GB1476585A (en) | Method for manufacturing semiconductor devices | |
| GB988367A (en) | Semiconductor devices and method of fabricating same | |
| US3722079A (en) | Process for forming buried layers to reduce collector resistance in top contact transistors | |
| US3489961A (en) | Mesa etching for isolation of functional elements in integrated circuits | |
| GB1030927A (en) | Method of making connections to semiconductor bodies | |
| US4265685A (en) | Utilizing simultaneous masking and diffusion of peripheral substrate areas | |
| GB1470212A (en) | Manufacture of transistor structures | |
| US3616348A (en) | Process for isolating semiconductor elements | |
| GB1515184A (en) | Semiconductor device manufacture | |
| GB1137577A (en) | Improvements in and relating to semiconductor devices | |
| US3716765A (en) | Semiconductor device with protective glass sealing | |
| GB1226814A (en:Method) | ||
| GB1072778A (en) | Semiconductor devices and methods of fabricating them | |
| JPS6235580A (ja) | モノリシツク温度補償形電圧基準ダイオ−ド | |
| US3735210A (en) | Zener diode for monolithic integrated circuits | |
| GB1100718A (en) | Method of producing an electrical connection to a surface of an electronic device | |
| US3664894A (en) | Method of manufacturing semiconductor devices having high planar junction breakdown voltage | |
| US3823349A (en) | Interconnection metallurgy system for semiconductor devices | |
| US3397447A (en) | Method of making semiconductor circuits | |
| US3739239A (en) | Semiconductor device and method of manufacturing the device | |
| US3592705A (en) | Method of making semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE | Patent expired |