GB1165774A - Improvements in and relating to Voltage-Dependent Capacitors - Google Patents
Improvements in and relating to Voltage-Dependent CapacitorsInfo
- Publication number
- GB1165774A GB1165774A GB1161267A GB1161267A GB1165774A GB 1165774 A GB1165774 A GB 1165774A GB 1161267 A GB1161267 A GB 1161267A GB 1161267 A GB1161267 A GB 1161267A GB 1165774 A GB1165774 A GB 1165774A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- wafer
- silicon
- face
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000007373 indentation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
1,165,774. Varactor diodes. SIEMENS A.G. 13 March, 1967 [14 March, 1966], No. 11612/67. Heading H1K. Varactor diodes are formed with non-planar active junctions. In one embodiment an axially bored cylindrical or hemicylindrical N-type silicon body has P+ and N<SP>+</SP>-type regions respectively formed by diffusion at the rim and bore, electrodes being formed on these regions of enhanced conductivity. In a second example concentric but spaced apart P<SP>+</SP> and N<SP>+</SP> regions are formed in an N-type silicon wafer by using planar diffusion techniques from both sides of the wafer. The junctions are protected by silicon dioxide layers and concentric electrodes applied at one face of the wafer. In the other example a part-spherical indentation is formed on one face of a P<SP>+</SP> silicon wafer, an epitaxial layer of N-type material grown on this face and a N + zone formed by diffusion at the surface of the N-type layer. Silicon is removed from the surface by grinding or etching to leave part spherical N and N<SP>+</SP> layers in the surface of the P<SP>+</SP> body.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0102508 | 1966-03-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1165774A true GB1165774A (en) | 1969-10-01 |
Family
ID=7524493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1161267A Expired GB1165774A (en) | 1966-03-14 | 1967-03-13 | Improvements in and relating to Voltage-Dependent Capacitors |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1513861A (en) |
| GB (1) | GB1165774A (en) |
| NL (1) | NL6700819A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764125A1 (en) * | 1968-04-05 | 1971-05-06 | Philips Nv | Semiconductor device with two capacitance diodes connected in push-pull |
| GB1220436A (en) * | 1968-07-29 | 1971-01-27 | Matsushita Electric Ind Co Ltd | Stress sensitive semiconductor element |
-
1967
- 1967-01-18 NL NL6700819A patent/NL6700819A/xx unknown
- 1967-03-09 FR FR98103A patent/FR1513861A/en not_active Expired
- 1967-03-13 GB GB1161267A patent/GB1165774A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1513861A (en) | 1968-02-16 |
| NL6700819A (en) | 1967-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |