GB1162487A - Integrated Circuit Planar Transistor. - Google Patents
Integrated Circuit Planar Transistor.Info
- Publication number
- GB1162487A GB1162487A GB38844/68A GB3884468A GB1162487A GB 1162487 A GB1162487 A GB 1162487A GB 38844/68 A GB38844/68 A GB 38844/68A GB 3884468 A GB3884468 A GB 3884468A GB 1162487 A GB1162487 A GB 1162487A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- substrate
- collector
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68402067A | 1967-11-17 | 1967-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1162487A true GB1162487A (en) | 1969-08-27 |
Family
ID=24746394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38844/68A Expired GB1162487A (en) | 1967-11-17 | 1968-08-14 | Integrated Circuit Planar Transistor. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3510736A (https=) |
| JP (1) | JPS4827505B1 (https=) |
| BE (1) | BE719511A (https=) |
| DE (1) | DE1764829B1 (https=) |
| ES (1) | ES356515A1 (https=) |
| FR (1) | FR1575404A (https=) |
| GB (1) | GB1162487A (https=) |
| NL (1) | NL6810406A (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916431A (en) * | 1974-06-21 | 1975-10-28 | Rca Corp | Bipolar integrated circuit transistor with lightly doped subcollector core |
| US3976512A (en) * | 1975-09-22 | 1976-08-24 | Signetics Corporation | Method for reducing the defect density of an integrated circuit utilizing ion implantation |
| US4079408A (en) * | 1975-12-31 | 1978-03-14 | International Business Machines Corporation | Semiconductor structure with annular collector/subcollector region |
| US4388634A (en) * | 1980-12-04 | 1983-06-14 | Rca Corporation | Transistor with improved second breakdown capability |
| US4571275A (en) * | 1983-12-19 | 1986-02-18 | International Business Machines Corporation | Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector |
| US4644383A (en) * | 1985-04-08 | 1987-02-17 | Harris Corporation | Subcollector for oxide and junction isolated IC's |
| US5311054A (en) * | 1991-03-25 | 1994-05-10 | Harris Corporation | Graded collector for inductive loads |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1047388A (https=) * | 1962-10-05 |
-
1967
- 1967-11-17 US US684020A patent/US3510736A/en not_active Expired - Lifetime
-
1968
- 1968-07-23 NL NL6810406A patent/NL6810406A/xx unknown
- 1968-07-26 ES ES356515A patent/ES356515A1/es not_active Expired
- 1968-08-07 FR FR1575404D patent/FR1575404A/fr not_active Expired
- 1968-08-14 DE DE19681764829 patent/DE1764829B1/de not_active Withdrawn
- 1968-08-14 GB GB38844/68A patent/GB1162487A/en not_active Expired
- 1968-08-14 BE BE719511D patent/BE719511A/xx unknown
-
1971
- 1971-08-26 JP JP46065549A patent/JPS4827505B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ES356515A1 (es) | 1970-04-01 |
| BE719511A (https=) | 1969-01-16 |
| JPS4827505B1 (https=) | 1973-08-23 |
| NL6810406A (https=) | 1969-05-20 |
| DE1764829B1 (de) | 1972-01-13 |
| US3510736A (en) | 1970-05-05 |
| FR1575404A (https=) | 1969-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |